Philips pmv65xp Datasheet

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Page 1

PMV65XP

P-channel TrenchMOS™ extremely low level FET

Rev. 01 — 28 September 2004 Product data sheet

1. Product proﬁle

1.1 General description

P-channel enhancement mode ﬁeld effect transistor in a plastic package using TrenchMOS™ technology.

1.2 Features

■ Low threshold voltage ■ Low on-state resistance.

1.3 Applications

■ Low power DC-to-DC converters ■ Battery management

■ Load switching ■ Battery powered portable equipment.

1.4 Quick reference data

■ VDS≤−20 V ■ ID≤−3.9 A

■ R

≤ 76 mΩ ■ Qgd= 0.65 nC (typ).

DSon

2. Pinning information

Table 1: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 source (s) 3 drain (d)

SOT23

003aaa671

Page 2

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

PMV65XP SOT23 Plastic surface mounted package; 3 leads SOT23

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

Source-drain diode

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C-−20 V drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ - −20 V gate-source voltage (DC) - ±12 V drain current (DC) Tsp=25°C; VGS= −4.5 V; Figure 2 and 3 - −3.9 A

= 100 °C; VGS= −4.5 V; Figure 2 - −2.5 A

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 - −15.9 A total power dissipation Tsp=25°C; Figure 1 - 1.92 W storage temperature −55 +150 °C junction temperature −55 +150 °C

source (diode forward) current (DC) Tsp=25°C-−1.6 A peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs-−6.4 A

Product data sheet Rev. 01 — 28 September 2004 2 of 12

Page 3

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

120

der

(%)

0 50 100 150 200

tot

der

-----------------------

tot 25 C°()

100%×= I

03aa17

(°C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

-I

(A)

Limit R

DSon

= -V

/ -I

120

der

(%)

0 50 100 150 200

der

-------------------

D25C

()

100%×=

03aa25

(°C)

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03ar44

tp = 10 µs

100 µs

-1

-2

-1

1 10 10

1 ms 10 ms

100 ms

-VDS (V)

Tsp=25°C; IDM is single pulse; VGS= −4.5 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

Product data sheet Rev. 01 — 28 September 2004 3 of 12

Page 4

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-sp)

thermal resistance from junction to solder point Figure 4 --65K/W

5.1 Transient thermal impedance

th(j-sp)

(K/W)

0.5

δ =

0.2

0.1

0.05

0.02

single pul se

-1

-5

-4

-3

-2

-1

1 10

(s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

03ar45

δ =

Product data sheet Rev. 01 — 28 September 2004 4 of 12

Page 5

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

DSS

GSS

DSon

Dynamic characteristics

g(tot)

plat

iss

oss

rss

d(on)

d(off)

Source-drain diode

drain-source breakdown voltage ID= −250 µA; VGS=0V

=25°C −20 - - V

= −55 °C −18 - - V

gate-source threshold voltage ID= −1 mA; VDS=VGS; Figure 9 and 10

=25°C −0.55 −0.75 −0.95 V

= 150 °C −0.35 - - V

= −55 °C--−1.1 V

drain-source leakage current VDS= −20 V; VGS=0V

=25°C--−1 µA

= 150 °C--−100 µA

gate-source leakage current VGS= ±12 V; VDS=0V - −10 −100 nA drain-source on-state resistance VGS= −4.5 V; ID= −2.8 A; Figure 6 and 8

=25°C - 65 76 mΩ

= 150 °C - 104 122 mΩ

= −2.5 V; ID= −2.3 A; Figure 6 and 8 - 90 112 mΩ

total gate charge ID= −2.8 A; VDS= −6 V; VGS= −4.5 V; gate-source charge - 1.6 - nC

Figure 11

- 7.6 - nC

gate-drain (Miller) charge - 0.65 - nC plateau voltage - −1.5 - V input capacitance VGS=0V; VDS= −20 V; f = 1 MHz; output capacitance - 105 - pF

Figure 13

- 725 - pF

reverse transfer capacitance - 80 - pF turn-on delay time VDS= −6 V; RL=6Ω;

= −4.5 V; RG=6Ω

rise time - 21 - ns

-7- ns

turn-off delay time - 68 - ns fall time -33- ns

source-drain (diode forward)

IS= −1.25 A; VGS=0V;Figure 12 - −0.77 −1.2 V

voltage

Product data sheet Rev. 01 — 28 September 2004 5 of 12

Page 6

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

-I

(A)

0 0.5 1 1.5 2

-4.5 V

03ar46

-3.5 V

-3 V

-2.5 V

-2 V

-1.8 V

-1.6 V

VGS = -1.4 V

-V

(V)

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

03ar48

-I

(A)

200

DSon

(mΩ)

160

120

0 5 10 15 20

=25°C

VGS = -2.5 V

03ar47

-3 V

-3.5 V

-4.5 V

-I

(A)

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values.

1.5

03aq10

Tj = 150 °C

01234

Tj=25°C and 150 °C; VDS> IDxR

25 °C

DSon

-V

(V)

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

0.5

-60 0 60 120 180

DSon

---------------------------- -

DSon 25 C°()

(°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

Product data sheet Rev. 01 — 28 September 2004 6 of 12

Page 7

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

1.2

-V

GS(th)

(V)

0.8

0.4

-60 0 60 120 180

ID= −1 mA; VDS=V

max

typ

min

03ar95

(°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

-V

(V)

-3

-I

(A)

-4

-5

-6

0 0.2 0.4 0.6 0.8 1

03ar96

maxtypmin

-V

(V)

Tj=25°C; VDS= −5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03ar51

0246810

ID= −2.8 A; VDS= −6V

Fig 11. Gate-source voltage as a function of gate charge; typical values.

(nC)

Product data sheet Rev. 01 — 28 September 2004 7 of 12

Page 8

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

-I

(A)

0 0.3 0.6 0.9 1.2

150 °C

03ar50

Tj = 25 °C

-V

(V)

Tj=25°C and 150 °C; VGS=0V VGS= 0 V; f = 1 MHz

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical values.

(pF)

-1

1 10 10

03ar49

C C

-VDS (V)

iss

oss rss

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

Product data sheet Rev. 01 — 28 September 2004 8 of 12

Page 9

Philips Semiconductors

PMV65XP

P-channel TrenchMOS™ extremely low level FET

7. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

1.1

0.9

max.

0.1

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC EIAJ

1.4

1.9

1.2

REFERENCES

0.95

Qwv

2.5

2.1

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

UNIT

OUTLINE

VERSION

SOT23 TO-236AB

Fig 14. SOT23 package outline.

Product data sheet Rev. 01 — 28 September 2004 9 of 12

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Philips Semiconductors

8. Revision history

Table 6: Revision history

Document ID Release

date

PMV65XP_1 20040928 Product

Data sheet status

data sheet

P-channel TrenchMOS™ extremely low level FET

Change notice

- 9397 750 13993 -

Doc. number Supersedes

PMV65XP

Product data sheet Rev. 01 — 28 September 2004 10 of 12

Page 11

Philips Semiconductors

9. Data sheet status

PMV65XP

P-channel TrenchMOS™ extremely low level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheetcontains data from thepreliminary speciﬁcation. Supplementarydatawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitablefor the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.Philips Semiconductors reserves the right to change the speciﬁcationwithout notice, in order to improve the design and supply the best possible product.

right to make changes at anytime in order to improve the design, manufacturingandsupply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representationsor warranties thatthese products are free frompatent,copyright, or mask workright infringement, unless otherwise speciﬁed.

12. Trademarks

11. Disclaimers

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 28 September 2004 11 of 12

Page 12

Philips Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

10 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information . . . . . . . . . . . . . . . . . . . . 11

PMV65XP

P-channel TrenchMOS™ extremely low level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believedto be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 28 September 2004

Document number: 9397 750 13993