Philips PMV31XN Technical data
1. Description
2. Features
PMV31XN
µTrenchMOS™ extremely low level FET
Rev. 01 — 26 February 2003 Product data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV31XN in SOT23.
■ TrenchMOS™ technology
■ Very fast switching
■ Low threshold voltage
■ Surface mount package.
3. Applications
■ Battery powered motor control
■ High-speed switch in set top box power supplies.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 source (s)
3 drain (d)
12
Top view
3
MSB003
SOT23
g
MBB076
d
s
Philips Semiconductors
PMV31XN
µTrenchMOS™ extremely low level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
D
P
T
R
DS
tot
j
DSon
drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 20 V
drain current (DC) Tsp=25°C; VGS= 4.5 V - 5.9 A
total power dissipation Tsp=25°C-2W
junction temperature - 150 °C
drain-source on-state resistance VGS= 4.5 V; ID= 1.5 A; Tj=25°C 3137mΩ
= 2.5 V; ID= 1 A; Tj=25°C 4453mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DSR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 20 V
drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -20V
gate-source voltage (DC) - ±12 V
drain current (DC) Tsp=25°C; VGS= 4.5 V; Figure 2 and 3 - 5.9 A
= 100 °C; VGS= 4.5 V; Figure 2 - 3.75 A
T
sp
peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 - 23.7 A
total power dissipation Tsp=25°C; Figure 1 -2W
storage temperature −55 +150 °C
junction temperature −55 +150 °C
source (diode forward) current (DC) Tsp=25°C - 1.7 A
9397 750 11066
Product data Rev. 01 — 26 February 2003 2 of 12
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Philips Semiconductors
PMV31XN
µTrenchMOS™ extremely low level FET
120
P
der
(%)
80
40
0
0 50 100 150 200
P
P
der
tot
----------------------
P
tot 25 C°()
100%×= I
03aa17
Tsp (°C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
2
10
120
I
der
(%)
80
40
0
0 50 100 150 200
I
D
der
------------------ -
I
D25C°()
100%×=
03aa25
Tsp (°C)
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03al69
I
D
(A)
10
1
10
10
-1
-2
-1
10
Limit R
DSon
= V
/ I
DS
D
DC
1 10 10
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
VDS (V)
Tsp=25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
2
9397 750 11066
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 26 February 2003 3 of 12
Philips Semiconductors
PMV31XN
µTrenchMOS™ extremely low level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance from junction to solder point Figure 4 --60K/W
7.1 Transient thermal impedance
2
10
Z
th(j-sp)
(K/W)
= 0.5
δ
0.2
10
0.1
1
0.05
0.02
single pulse
-4
10
-3
10
-2
10
-1
10
1 10 10
P
t
p
T
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
03al68
δ =
t
p
T
t
2
9397 750 11066
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 26 February 2003 4 of 12
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