Philips PMSTA55 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D102
PMSTA55; PMSTA56
PNP general purpose transistors
Product specification
File under Discrete Semiconductors, SC04
1997 Jun 02
Philips Semiconductors Product specification
PNP general purpose transistors PMSTA55; PMSTA56
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 80 V).
APPLICATIONS
• Intended for telephony and professional communication
equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: PMSTA05 and PMSTA06.
MARKING
TYPE NUMBER MARKING CODE
PMSTA55 t2H
PMATA56 t2G
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
3
2
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMSTA55 −−60 V
PMSTA56 −−80 V
V
CEO
collector-emitter voltage open base
PMSTA55 −−60 V
PMSTA56 −−80 V
I
P
h
f
CM
tot
FE
T
peak collector current −−500 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
DC current gain IC= −100 mA; VCE= −1V 50 −
transition frequency IC= −100 mA; VCE= −1V 50 − MHz
1997 Jun 02 2
Philips Semiconductors Product specification
PNP general purpose transistors PMSTA55; PMSTA56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
PMSTA55 −−60 V
PMSTA56 −−80 V
collector-emitter voltage open base
PMSTA55 −−60 V
PMSTA56 −−80 V
emitter-base voltage open collector −−4V
collector current (DC) −−500 mA
peak collector current −−500 mA
peak base current −−500 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
V
f
T
FE
CEsat
BE
collector cut-off current
PMSTA55 I
PMSTA56 I
= 0; VCB= −60 V −−100 nA
E
= 0; VCB= −80 V −−100 nA
E
emitter cut-off current IC= 0; VEB= −4V −−500 nA
DC current gain IC= −10 mA; VCE= −1V 50 −
=−100 mA; VCE= −1 V; note 1 50 −
I
C
collector-emitter saturation voltage IC= −100 mA; IB= −10 mA −−250 mV
base-emitter voltage IC= −100 mA; VCE= −1 V; note 1 −−1.2 mV
transition frequency IC= −100 mA; VCE= −1 V; f = 100 MHz 50 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1997 Jun 02 3
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