Philips pmsta43 Service manual
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D187
PMSTA42; PMSTA43
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Jun 19
1999 May 21
Philips Semiconductors Product specification
NPN high-voltage transistors PMSTA42; PMSTA43
FEATURES
• High current (max. 500 mA)
• High voltage (max. 200 V).
APPLICATIONS
• High-voltage switching in telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PNP complements: PMSTA92 and PMSTA93.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMSTA42 ∗1D
PMSTA43 ∗1E
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMSTA42 − 300 V
PMSTA43 − 200 V
V
CEO
collector-emitter voltage open base
PMSTA42 − 300 V
PMSTA43 − 200 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21 2
Philips Semiconductors Product specification
NPN high-voltage transistors PMSTA42; PMSTA43
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current
PMSTA42 I
PMSTA43 I
= 0; VCB= 200 V − 100 nA
E
= 0; VCB= 160 V − 100 nA
E
emitter cut-off current
PMSTA42 I
PMSTA43 I
= 0; VEB=6V − 100 nA
C
= 0; VEB=4V − 100 nA
C
DC current gain IC= 1 mA; VCE=10V 25 −
I
= 10 mA; VCE=10V 40 −
C
I
= 30 mA; VCE= 10 V; note 1 40 −
C
collector-emitter saturation voltage IC= 20 mA; IB=2mA − 500 mV
feedback capacitance IC=ic= 0; VCB= 20 V; f = 1 MHz
PMSTA42 − 3pF
PMSTA43 − 4pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 50 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 21 3
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