Philips PMSTA06 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D102
PMSTA05; PMSTA06
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 16
1999 Apr 29
Philips Semiconductors Product specification
NPN general purpose transistors PMSTA05; PMSTA06
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 80 V).
APPLICATIONS
• Primarily intended for telephony and professional
communication equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: PMSTA55 and PMSTA56.
MARKING
TYPE NUMBER MARKING CODE
PMSTA05 ∗1H
PMATA06 ∗1G
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMSTA05 − 60 V
PMSTA06 − 80 V
V
CEO
collector-emitter voltage open base
PMSTA05 − 60 V
PMSTA06 − 80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 4V
collector current (DC) − 500 mA
peak collector current − 500 mA
peak base current − 500 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 29 2
Philips Semiconductors Product specification
NPN general purpose transistors PMSTA05; PMSTA06
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
thermal resistance from junction to ambient note1 625 K/W
collector cut-off current
PMSTA05 I
PMSTA06 I
= 0; VCB=60V − 100 nA
E
= 0; VCB=80V − 100 nA
E
emitter cut-off current IC= 0; VEB=3V − 500 nA
DC current gain IC= 10 mA; VCE=2V 50 −
= 100 mA; VCE= 1 V; note 1 50 −
I
C
collector-emitter saturation voltage IC= 100 mA; IB= 10 mA; note 1 − 250 mV
base-emitter saturation voltage IC= 100 mA; IB= 10 mA; note 1 − 900 mV
base-emitter voltage IC= 100 mA; VCE=1V − 1.2 V
transition frequency IC= 10 mA; VCE= 2 V; f = 100 MHz 100 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 29 3
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