Philips PMST6429, PMST6428 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMST6428; PMST6429
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 12
1999 Apr 22
Philips Semiconductors Product specification
NPN general purpose transistors PMST6428; PMST6429
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification in e.g.
telephony and professional communication equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST6428 ∗1K
PMST6429 ∗1L
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMST6428 − 60 V
PMST6429 − 55 V
V
CEO
collector-emitter voltage open base
PMST6428 − 50 V
PMST6429 − 45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN general purpose transistors PMST6428; PMST6429
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
≤ 25 °C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=30V − 10 nA
I
= 0; VCB=30V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V − 10 nA
DC current gain VCE=5V
PMST6428 I
DC current gain V
PMST6429 I
collector-emitter saturation
voltage
= 0.01 mA 250 −
C
= 0.1 mA 250 650
I
C
I
= 1 mA 250 −
C
I
= 10 mA 250 −
C
=5V
CE
= 0.01 mA 500 −
C
I
= 0.1 mA 500 1250
C
I
= 1 mA 500 −
C
I
= 10 mA 500 −
C
IC= 10 mA; IB= 0.5 mA; note 1 − 200 mV
I
= 100 mA; IB= 5 mA; note 1 − 600 mV
C
base-emitter voltage IC= 1 mA; VCE= 5 V 560 660 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 3pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 12 pF
transition frequency IC= 1 mA; VCE= 5 V; f = 100 MHz 100 700 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
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