Philips PMST5089 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMST5088; PMST5089
NPN general purpose transistors
Product specification
Supersedes data of 1997 May 22
1999 Apr 22
Philips Semiconductors Product specification
NPN general purpose transistors PMST5088; PMST5089
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 30 V).
APPLICATIONS
• Low-noise input stages in audio equipment.
DESCRIPTION
handbook, halfpage
NPN transistor in a SC-70; SOT323 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST5088 ∗1Q
PMST5089 ∗1R
Note
Fig.1 Simplified outline (SC-70; SOT323)
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
1
Top view
and symbol.
3
3
1
2
2
MAM062
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMST5088 − 35 V
PMST5089 − 30 V
V
CEO
collector-emitter voltage open base
PMST5088 − 30 V
PMST5089 − 25 V
V
I
I
I
P
T
T
T
EBO
C
CM
BM
tot
stg
j
amb
emitter-base voltage open collector − 4.5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN general purpose transistors PMST5088; PMST5089
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=20V − 50 nA
I
= 0; VCB=20V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=3V − 50 nA
= 0; VEB= 4.5 V − 100 nA
I
C
DC current gain VCE=5V
PMST5088 I
DC current gain V
PMST5089 I
= 0.1 mA 300 900
C
I
= 1 mA 350 −
C
I
= 10 mA 300 −
C
=5V
CE
= 0.1 mA 400 1200
C
I
= 1 mA 450 −
C
I
= 10 mA 400 −
C
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 500 mV
base-emitter voltage IC= 10 mA; VCE=5V − 800 mV
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 12 pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 − MHz
= 100 µA; VCE=5V; RS=1kΩ
C
PMST5088 − 3dB
f = 10 Hz to 15.7 kHz
PMST5089 − 2dB
1999 Apr 22 3
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