Philips PMST4403 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ok, halfpage
M3D187
PMST4403
PNP switching transistor
Product specification
Supersedes data of 1997 May 29
1999 Apr 22
Philips Semiconductors Product specification
PNP switching transistor PMST4403
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT323 plastic package.
NPN complement: PMST4401.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST4403 ∗2T
Note
1. ∗ = - : Made in Hong Kong.
Fig.1 Simplified outline (SOT323) and symbol.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
1
Top view
3
3
1
2
2
MAM048
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
PNP switching transistor PMST4403
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −40 V −−50 nA
I
= 0; VCB= −40 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain VCE= −1 V; (see Fig.2) −−
I
=−0.1mA 30 −
C
= −1mA 60 −
I
C
I
=−10 mA 100 −
C
DC current gain I
collector-emitter saturation
voltage
= −150 mA; VCE= −2 V; note 1 100 300
C
I
= −500 mA; VCE= −2 V; note 1 20 −
C
IC= −150 mA; IB= −15 mA; note 1 −−400 mV
I
= −500 mA; IB= −50 mA; note 1 −−750 mV
C
base-emitter saturation voltage IC= −150 mA: IB= −15 mA; note 1 +750 −950 mV
I
= −500 mA; IB= −50 mA; note 1 −−1.3 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 35 pF
transition frequency IC= −20 mA; VCE= −10 V; f = 100 MHz 200 − MHz
turn-on time I
delay time − 15 ns
= −150 mA; I
Con
I
=15mA
Boff
= −15 mA;
Bon
− 40 ns
rise time − 30 ns
turn-off time − 350 ns
storage time − 300 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
Loading...