Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D187
PMST4401
NPN switching transistor
Product data sheet
Supersedes data of 1997 May 07
1999 Apr 22
Page 2
NXP Semiconductors Product data sheet
NPN switching transistor PMST4401
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and linear amplification,
especially in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
complement: PMST4403.
PNP
MARKING
T YPE NUMBER MARKING CODE
(1)
PMST4401 ∗2X
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 600 mA
peak collector current − 600 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Page 3
NXP Semiconductors Product data sheet
NPN switching transistor PMST4401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE = 0; VCB = 60 V − 50 nA
IE = 0; VCB = 60 V; Tj = 150 °C − 10 µA
emitter cut-off current IC = 0; VEB = 6 V − 50 nA
DC current gain VCE = 1 V; (see Fig.2)
IC = 0.1 mA 20 −
IC = 1 mA 40 −
IC = 10 mA 80 −
IC = 150 mA; note 1 100 300
DC current gain IC = 500 mA; VCE = 2 V; note 1 40 −
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 400 mV
IC = 500 mA; IB = 50 mA; note 1 − 750 mV
base-emitter saturation vo ltage IC = 150 mA; IB = 15 mA; note 1 − 950 mV
IC = 500 mA; IB = 50 mA; note 1 − 1.2 V
collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 8 pF
emitter capacitance IE = ie = 0; VEB = 500 mV; f = 1 MHz − 30 pF
transition frequency IC = 20 mA; VCE = 10 V; f = 100 MHz 250 − MHz
turn-on time I
delay time − 15 ns
= 150 mA; I
Con
= −15 mA
I
Boff
= 15 mA;
Bon
− 35 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 22 3
Page 4
NXP Semiconductors Product data sheet
V
V
NPN switching transistor PMST4401
300
handbook, full pagewidth
h
FE
200
100
0
−1
10
MGD811
VCE = 1 V
11010210
IC mA
Fig.2 DC current gain; typical values.
3
handbook, full pagewidth
oscilloscope
V
i
(probe)
450 Ω
R2
BB
R
B
CC
R
C
V
(probe)
o
450 Ω
oscilloscope
DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 22 4
Page 5
NXP Semiconductors Product data sheet
3
NPN switching transistor PMST4401
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT32
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
c
L
p
X
v M
A
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC EIAJ
E
1.35
1.15
REFERENCES
1.3
e1H
e
0.65
2.2
2.0
L
Qwv
p
E
0.45
0.15
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
1999 Apr 22 5
Page 6
NXP Semiconductors Product data sheet
NPN switching transistor PMST4401
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
1999 Apr 22 6
60134) may cause permanent damage to
Page 7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.
Printed in The Netherlands 115002/00/03/pp7 Date of release: 1999 Apr 22 Document order number: 9397 750 05729
Loading...