Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D187
PMST2907A
PNP switching transistor
Product specification
Supersedes data of 1999 Apr 22
2001 Nov 19
Page 2
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
FEATURES
• Low current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Medium power switching
• General purpose amplification.
DESCRIPTION
PNP switching transistor in an SC-70; SOT323 plastic
package. NPN complement: PMST2222A.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST2907A ∗2F
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 19 2
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Philips Semiconductors Product specification
PNP switching transistor PMST2907A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −50 V −−10 nA
I
= 0; VCB= −50 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −3V −−50 nA
DC current gain VCE= −10 V
I
= −0.1 mA 75 −
C
I
= −1 mA 100 −
C
I
= −10 mA; note 1 100 −
C
I
= −150 mA; note 1 100 300
C
I
= −500 mA; note 1 50 −
C
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA; note 1 −−400 mV
I
= −500 mA; IB= −50 mA; note 1 −−1.6 V
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1.3 V
I
= −500 mA; IB= −50 mA; note 1 −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V;
200 − MHz
f = 100 MHz; note 1
turn-on time I
delay time − 15 ns
= −150 mA; I
Con
I
=15mA
Boff
= −15 mA;
Bon
− 45 ns
rise time − 35 ns
turn-off time − 300 ns
storage time − 250 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Nov 19 3
Page 4
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
handbook, full pagewidth
oscilloscope
Vi= −9.5V; T = 500 µs; tp=10µs; tr=tf≤3 ns.
R1 = 68 Ω; R2 = 325Ω; RB= 325 Ω; RC= 160 Ω.
VBB= 3.5 V; VCC= −29.5 V.
Oscilloscope input impedance Zi=50Ω.
V
R
(probe)
450 Ω
V
i
B
R2
R1
BB
V
CC
R
C
V
o
DUT
Fig.2 Test circuit for switching times.
(probe)
450 Ω
MGD624
oscilloscope
2001 Nov 19 4
Page 5
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC EIAJ
E
1.35
1.15
REFERENCES
1.3
e
e
1
0.65
UNIT
mm
A
1.1
0.8
OUTLINE
VERSION
SOT323 SC-70
2001 Nov 19 5
H
E
2.2
2.0
L
p
0.45
0.15
Qwv
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 6
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 19 6
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Philips Semiconductors Product specification
PNP switching transistor PMST2907A
NOTES
2001 Nov 19 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, is believed tobe accurateand reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/03/pp8 Date of release: 2001 Nov 19 Document order number: 9397 750 09002
SCA73
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