Philips pmp4201v_g_y Datasheet

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Page 1

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

Rev. 04 — 28 August 2009 Product data sheet

1. Product proﬁle

1.1 General description

NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages.The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated internally.

Table 1. Product overview

Type number Package NPN/NPN h

PMP4201V SOT666 - PMP4501V PMP5201V PMP4201G SOT353 SC-88A PMP4501G PMP5201G PMP4201Y SOT363 SC-88 PMP4501Y PMP5201Y

NXP JEITA

0.95 complement

FE1/hFE2

PNP/PNP complement

1.2 Features

n Current gain matching n Base-emitter voltage matching n Common emitter conﬁguration for SOT353 types n Application-optimized pinout

1.3 Applications

n Current mirror n Differential ampliﬁer

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V I h

CEO

collector-emitter voltage open base - - 45 V collector current - - 100 mA DC current gain VCE=5V;

=2mA

200 290 450

Page 2

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per device

FE1/hFE2

BE1−VBE2VBE

[1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value.

2. Pinning information

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

SOT666; SOT363

1 base TR1 2 base TR2 3 collector TR2 4 emitter TR2 5 emitter TR1 6 collector TR1

…continued

hFEmatching VCE=5V;

=2mA

matching VCE=5V;

=2mA

[1]

0.98 1 -

[2]

--2mV

6 45

TR1

1 32

001aab555

006aaa548

456

TR2

321

SOT353

1 base TR1 2 emitter TR1, TR2 3 base TR2 4 collector TR2 5 collector TR1

3. Ordering information

Table 4. Ordering information

Type number Package

PMP4201V - plastic surface-mounted package; 6 leads SOT666 PMP4201G SC-88A plastic surface-mounted package; 5 leads SOT353 PMP4201Y SC-88 plastic surface-mounted package; 6 leads SOT363

132

TR1 TR2

123

006aaa549

Name Description Version

Product data sheet Rev. 04 — 28 August 2009 2 of 14

Page 3

NXP Semiconductors

4. Marking

Table 5. Marking codes

Type number Marking code

PMP4201V EA PMP4201G R7* PMP4201Y S7*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

CBO

CEO

EBO

tot

Per device

tot

amb

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

[1]

collector-base voltage open emitter - 50 V collector-emitter voltage open base - 45 V emitter-base voltage open collector - 6 V collector current - 100 mA peak collector current single pulse;

≤ 1ms

total power dissipation T

amb

≤ 25 °C SOT666 SOT353 SOT363

total power dissipation T

amb

≤ 25 °C SOT666 SOT353 SOT363

junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

- 200 mA

[1][2]

- 200 mW

[1]

- 200 mW

[1]

- 200 mW

[1][2]

- 300 mW

[1]

- 300 mW

[1]

- 300 mW

Product data sheet Rev. 04 — 28 August 2009 3 of 14

Page 4

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

th(j-a)

Per device

th(j-a)

thermal resistance from junction to ambient

SOT666 SOT353 SOT363

thermal resistance from junction to ambient

SOT666 SOT353 SOT363

in free air

NPN/NPN matched double transistors

[1][2]

- - 625 K/W

[1]

- - 625 K/W

[1]

- - 625 K/W

[1][2]

- - 416 K/W

[1]

- - 416 K/W

[1]

- - 416 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reﬂow soldering is the only recommended soldering method.

7. Characteristics

Table 8. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CBO

EBO

CEsat

BEsat

=25°C unless otherwise speciﬁed

collector-base cut-off current

VCB=30V; I

V I T

emitter-base cut-off current

VEB=5V; I

DC current gain VCE=5V;

I V

collector-emitter saturation voltage

IC= 10 mA; I

I I

base-emittersaturation voltage

IC= 10 mA; I

I I

=0A

=30V;

=0A;

= 150 °C

=0A

=10µA

=5V;

=2mA

= 0.5 mA

= 100 mA;

=5mA

= 0.5 mA

= 100 mA;

=5mA

- - 15 nA

--5µA

- - 100 nA

- 250 -

200 290 450

- 50 200 mV

- 200 400 mV

[1]

- 760 - mV

[1]

- 910 - mV

Product data sheet Rev. 04 — 28 August 2009 4 of 14

Page 5

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

Table 8. Characteristics

=25°C unless otherwise speciﬁed

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

base-emitter voltage VCE=5V;

=2mA

=5V;

=10mA

collector capacitance VCB=10V;

=0A;

E=ie

[2]

610 660 710 mV

[2]

- - 770 mV

- - 1.5 pF

f=1MHz

emitter capacitance VEB= 0.5 V;

=0A;

C=ic

-11-pF

f=1MHz

transition frequency VCE=5V;

= 10 mA;

100 250 - MHz

f = 100 MHz

NF noise ﬁgure V

=5V;

= 0.2 mA;

=2kΩ;

- 2.8 - dB

f = 10 Hz to

15.7 kHz V

=5V;

= 0.2 mA;

=2kΩ;

- 3.3 - dB

f = 1 kHz; B = 200 Hz

Per device

FE1/hFE2hFE

BE1−VBE2VBE

matching VCE=5V;

=2mA

matching VCE=5V;

=2mA

[3]

0.98 1 -

[4]

--2mV

[1] V [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value.

Product data sheet Rev. 04 — 28 August 2009 5 of 14

decreases by about 1.7 mV/K with increasing temperature.

BEsat

Page 6

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

2.70

2.25

1.80

1.35

0.90

0.45

006aaa532

(A)

0.20

0.16

0.12

0.08

0.04

IB (mA) = 4.50

4.05

3.60

3.15

0108462

=25°CV

amb

Fig 1. Collector current as a function of

collector-emitter voltage; typical values

VCE (V)

600

400

200

(1) T (2) T (3) T

(1)

(2)

(3)

−2

CE amb amb amb

−1

=5V

= 100 °C =25°C = −55 °C

101

006aaa533

(mA)

Fig 2. DC current gain as a function of collector

current; typical values

006aaa534

IC (mA)

BEsat

(V)

1.3

1.1

0.9

0.7

0.5

0.3

0.1

(1)

(2)

(3)

−1

110

IC/IB=20 (1) T (2) T (3) T

amb amb amb

= −55 °C =25°C = 100 °C

Fig 3. Base-emitter saturation voltage as a function

of collector current; typical values

006aaa535

IC (mA)

CEsat

(V)

−1 (1)

(2) (3)

−2

−1

110

IC/IB=20 (1) T (2) T (3) T

amb amb amb

= 100 °C =25°C = −55 °C

Fig 4. Collector-emitter saturation voltage as a

function of collector current; typical values

Product data sheet Rev. 04 — 28 August 2009 6 of 14

Page 7

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

006aaa536

(mA)

(V)

0.8

0.6

0.4 10

−1

VCE=5V; T

110

=25°CV

amb

Fig 5. Base-emitter voltage as a function of collector

current; typical values

006aaa538

(pF)

(MHz)

110

=5V; T

amb

=25°C

006aaa537

IC (mA)

Fig 6. Transition frequency as a function of collector

current; typical values

006aaa539

(pF)

0108462

f = 1 MHz; T

=25°C f = 1 MHz; T

amb

VCB (V)

Fig 7. Collector capacitance as a function of

collector-base voltage; typical values

0642

amb

=25°C

VEB (V)

Fig 8. Emitter capacitance as a function of

emitter-base voltage; typical values

Product data sheet Rev. 04 — 28 August 2009 7 of 14

Page 8

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

8. Application information

out

TR2TR1

006aaa523

OUT1

Fig 9. Current mirror Fig 10. Differential ampliﬁer

9. Package outline

V+

OUT2 IN2IN1 TR2TR1

V−

006aaa525

2.2

1.8

132

0.65

1.3

0.45

0.15

0.3

0.2

1.7

1.3

1.5

1.1

Dimensions in mm

1.7

1.5

pin 1 index

123

0.5 1

0.6

0.5

456

0.3

0.27

0.17

0.1

0.18

0.08

04-11-08

2.2

2.0

1.35

1.15

Fig 11. Package outline SOT666 Fig 12. Package outline SOT353 (SC-88A)

2.2

2.0

1.35

1.15

pin 1 index

2.2

1.8

0.45

465

0.15

1.1

0.8

1.1

0.8

0.25

0.10

04-11-16Dimensions in mm

132

0.65

1.3

0.3

0.2

0.25

0.10

06-03-16Dimensions in mm

Fig 13. Package outline SOT363 (SC-88)

Product data sheet Rev. 04 — 28 August 2009 8 of 14

Page 9

NXP Semiconductors

10. Packing information

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type

Package Description Packing quantity

number

[1]

3000 4000 8000 10000

PMP4201V SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PMP4201G SOT353 4 mm pitch, 8 mm tape and reel -115 - - -135

[2]

PMP4201Y SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

[1] For further information and the availability of packing methods, seeSection 14. [2] T1: normal taping [3] T2: reverse taping

2.75

2.45

2.1

1.6

-115 - - -135

[3]

-125 - - -165

0.538

1.075

1.72

Reﬂow soldering is the only recommended soldering method.

0.55 (2×)

1.7

0.45 (4×)

0.5

(4×)

Fig 14. Reﬂow soldering footprint SOT666

0.6

(2×)

0.65 (2×)

0.4

(6×)

0.25 (2×)

0.325 (4×)

0.3

(2×)

0.375 (4×)

solder lands

placement area

solder paste

occupied area

Dimensions in mm

sot666_fr

Product data sheet Rev. 04 — 28 August 2009 9 of 14

Page 10

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

2.35

solder lands

solder paste solder resist occupied area

0.50 (4×)

Dimensions in mm

Fig 15. Reﬂow soldering footprint SOT353 (SC-88A)

4.9

2.25

0.85

4.5

0.85 1

2.65

1.20

2.40

1.5

2.5

0.60 (1×)

0.90 2.10

0.40

msa366

solder lands

solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

1.3 1.3

1.225 1.225

sot353_fw

Dimensions in mm

Fig 16. Wave soldering footprint SOT353 (SC-88A)

Product data sheet Rev. 04 — 28 August 2009 10 of 14

Page 11

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

2.65

solder lands

2.35

1.5

0.6

(4×)

0.5

(4×)

0.4 (2×) solder resist

solder paste

0.5

(4×)

0.6

(4×)

0.6

(2×)

1.8

Fig 17. Reﬂow soldering footprint SOT363 (SC-88)

1.5

4.5

1.5

1.3 1.3

2.45

5.3

Fig 18. Wave soldering footprint SOT363 (SC-88)

0.3

occupied area

Dimensions in mm

sot363_fr

solder lands

2.5 solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_fw

Product data sheet Rev. 04 — 28 August 2009 11 of 14

Page 12

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMP4201V_G_Y_4 20090828 Product data sheet - PMP4201V_G_Y_3 Modiﬁcations:

PMP4201V_G_Y_3 20060915 Product data sheet - PMP4201G_Y_2 PMP4201G_Y_2 20060214 Product data sheet - PMP4201G_Y_1 PMP4201G_Y_1 20060131 Product data sheet - -

• This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical content.

• Figure 14 “Reﬂow soldering footprint SOT666”: updated

• Figure 16 “Wave soldering footprint SOT353 (SC-88A)”: updated

• Figure 17 “Reﬂow soldering footprint SOT363 (SC-88)”: updated

• Figure 18 “Wave soldering footprint SOT363 (SC-88)”: updated

Product data sheet Rev. 04 — 28 August 2009 12 of 14

Page 13

NXP Semiconductors

13. Legal information

13.1 Data sheet status

PMP4201V; PMP4201G; PMP4201Y

NPN/NPN matched double transistors

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s)described in this document mayhave changedsince this document was publishedand maydiffer in case of multipledevices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information includedherein and shall have no liabilityfor the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with thesame product type number(s)and title. Ashort datasheet is intended for quickreference only and should notbe relied upon to contain detailedand full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or warranties, expressed or implied, asto the accuracy or completenessof such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This documentsupersedes and replaces all information suppliedprior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Deﬁnition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute MaximumRatings System of IEC 60134) maycause permanent damage tothedevice. Limiting valuesare stress ratings onlyand operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication ofany license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales ofﬁce addresses, please send an email to: [email protected]

Product data sheet Rev. 04 — 28 August 2009 13 of 14

Page 14

NXP Semiconductors

PMP4201V; PMP4201G; PMP4201Y

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

NPN/NPN matched double transistors

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 28 August 2009

Document identifier: PMP4201V_G_Y_4