Philips pmgd280un Datasheet

MBD128

1. Product proﬁle

1.1 Description

1.2 Features

1.3 Applications

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

Rev. 01 — 10 February 2004 Product data

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

■ Surface mounted package ■ Footprint 40% smaller than SOT23

■ Dual device ■ Fast switching

■ Low on-state resistance ■ Low threshold voltage.

■ Driver circuits ■ Switching in portable appliances.

1.4 Quick reference data

■ VDS≤ 20 V ■ ID≤ 0.87 A

■ P

≤ 0.41 W ■ R

tot

DSon

2. Pinning information

Table 1: Pinning - SOT363 (SC-88), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 source (s1) 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) 6 drain (d1)

654

123

Top view

SOT363 (SC-88)

MSA370

≤ 340 mΩ.

d

1

s

1

g1s

d

2

g

MSD901

2

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

PMGD280UN SC-88 Plastic surface mounted package; 6 leads SOT363

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 20 V drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -20V gate-source voltage (DC) - ±8V drain current (DC) Tsp=25°C; VGS= 4.5 V; Figure 2 and 3

= 100 °C; VGS= 4.5 V; Figure 2

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3

[1]

- 0.87 A

[1]

- 0.55 A

[1]

- 1.75 A total power dissipation Tsp=25°C; Figure 1 - 0.4 W storage temperature −55 +150 °C junction temperature −55 +150 °C

source (diode forward) current (DC) Tsp=25°C peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs

[1]

- 0.34 A

[1]

- 0.69 A

[1] Single device conducting.

9397 750 12763

Product data Rev. 01 — 10 February 2004 2 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×= I

03aa17

Tsp (°C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------

I

D25C

()

100%×=

°

03aa25

Tsp (°C)

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03an09

I

D

(A)

1

10

-1

-2

-1

10

Limit R

DSon

= V

/ I

DS

D

tp = 10 µs

100 µs

1 ms

DC

1 10 10

10 ms

100 ms

VDS (V)

Tsp=25°C; IDM is single pulse; VGS= 4.5 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

9397 750 12763

Product data Rev. 01 — 10 February 2004 3 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistance from junction to solder point Figure 4 - - 300 K/W

5.1 Transient thermal impedance

3

10

Z

th(j-sp)

(K/W)

= 0.5

δ

2

10

0.2

0.1

0.05

0.02

10

1

10

-4

single pulse

P

t

p

T

-3

10

-2

10

-1

10

1 10

tp (s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

03an28

δ =

t

p

T

t

9397 750 12763

Product data Rev. 01 — 10 February 2004 4 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

drain-source breakdown voltage ID=1µA; VGS=0V

=25°C 20--V

T

j

= −55 °C 18--V

T

j

gate-source threshold voltage ID= 0.25 mA; VDS=VGS; Figure 9

=25°C 0.45 0.7 1 V

T

j

= 150 °C 0.25 - - V

T

j

= −55 °C - - 1.2 V

T

j

drain-source leakage current VDS=20V; VGS=0V

=25°C --1µA

T

j

= 150 °C - - 100 µA

T

j

gate-source leakage current VGS= ±8 V; VDS= 0 V - 10 100 nA drain-source on-state resistance VGS= 4.5 V; ID= 0.2 A; Figure 7 and 8

=25°C - 280 340 mΩ

T

j

= 150 °C - 448 544 mΩ

T

j

= 2.5 V; ID= 0.1 A; Figure 7 and 8 - 360 430 mΩ

V

GS

= 1.8 V; ID= 0.075 A; Figure 7 and 8 - 460 660 mΩ

V

GS

total gate charge ID= 1 A; VDD=10V; VGS= 4.5 V; gate-source charge - 0.13 - nC

Figure 13

- 0.89 - nC

gate-drain (Miller) charge - 0.18 - nC input capacitance VGS=0V; VDS= 20 V; f = 1 MHz; output capacitance - 11 - pF

Figure 11

-45-pF

reverse transfer capacitance - 7 - pF turn-on delay time VDD=10V; RL=10Ω;

= 4.5 V; RG=6Ω

V

rise time -10-ns

GS

- 4.5 - ns

turn-off delay time - 18.5 - ns fall time -5-ns

source-drain (diode forward) voltage IS= 0.3 A; VGS=0V;Figure 12 - 0.83 1.2 V

9397 750 12763

Product data Rev. 01 — 10 February 2004 5 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

2.5

I

D

(A)

2

1.5

1

0.5

0

0 0.5 1 1.5 2

4.5 V 3 V 2.5 V

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

R

DSon

(Ω)

0.8

1

VGS = 1.8 V

2 V

03an02

2 V

1.8 V

VGS = 1.5 V

VDS (V)

03an03

2.5

I

V

D

(A)

1.5

0.5

=25°C and 150 °C; VDS> IDxR

j

> ID x R

DS

2

1

0

01234

DSon

Tj = 150 °C25 °C

DSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2

a

1.5

03an04

VGS (V)

03af18

0.6

2.5 V

0.4

0.2

0

00.511.522.5

3 V

4.5 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1

0.5

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 12763

Product data Rev. 01 — 10 February 2004 6 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

1

V

GS(th)

(V)

0.8 typ

0.6

min

0.4

0.2

0

-60 0 60 120 180

ID= 0.25 mA; VDS=V

GS

03aj65

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

2

10

C

(pF)

-3

10

I

D

(A)

-4

10

-5

10

-6

10

0 0.2 0.4 0.6 0.8

03am43

typmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03an06

C

iss

10

1

-1

10

1 10 10

C

oss

C

rss

VDS (V)

2

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 12763

Product data Rev. 01 — 10 February 2004 7 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

1

I

S

VGS = 0 V

(A)

0.8

0.6

0.4

0.2

0

00.511.5

150 °C

Tj = 25 °C

03an05

VSD (V)

5

V

ID = 1 A

GS

(V)

Tj = 25 °C

4

VDD = 10 V

3

2

1

0

0 0.2 0.4 0.6 0.8 1

Tj=25°C and 150 °C; VGS=0V ID= 1 A; VDD=10V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

03an07

QG (nC)

9397 750 12763

Product data Rev. 01 — 10 February 2004 8 of 12

Philips Semiconductors

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

7. Package outline

Plastic surface mounted package; 6 leads SOT363

D

y

pin 1 index

132

e

1

e

E

H

E

56

b

4

A

1

p

wBM

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

b

cD

p

0.30

0.20

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

E

1.35

1.3

1.15

REFERENCES

e

0.65

H

L

Qywv

p

E

1

2.2

0.45

2.0

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Fig 14. SOT363 (SC-88).

9397 750 12763

Product data Rev. 01 — 10 February 2004 9 of 12

Philips Semiconductors

8. Soldering

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

2.35

solder paste solder lands solder resist occupied area

Dimensions in mm.

0.50 (4×)

Fig 15. Reﬂow soldering footprint for SOT363 (SC-88).

9. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20040210 - Product data (9397 750 12763).

0.50 (4×)

2.65

1.20

2.40

0.60 (2×)

0.40 (2×)

MSA432

0.90 2.10

9397 750 12763

Product data Rev. 01 — 10 February 2004 10 of 12

Philips Semiconductors

10. Data sheet status

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet containsdata from the preliminary speciﬁcation. Supplementary datawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2][3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.PhilipsSemiconductors reserves the right tochangethe speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at anytimeinorderto improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakes no representationsor warranties thattheseproducts are free frompatent,copyright, or mask workrightinfringement,unless otherwise speciﬁed.

13. Trademarks

12. Disclaimers

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

9397 750 12763

Product data Rev. 01 — 10 February 2004 11 of 12

Philips Semiconductors

Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PMGD280UN

Dual N-channel µTrenchMOS™ ultra low level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 10 February 2004 Document order number: 9397 750 12763