Philips PMEG2015EH, PMEG2015EJ User Guide
查询PMEG2015EH供应商
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
Rev. 02 — 7 April 2005 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small and flat SMD plastic
packages.
Table 1: Product overview
Type number Package Configuration
PMEG2015EH SOD123F - single diode
PMEG2015EJ SOD323F SC-90 single diode
Philips JEITA
1.2 Features
■ Forward current: ≤ 1.5 A
■ Reverse voltage: ≤ 20 V
■ Very low forward voltage
■ Small and flat lead SMD plastic packages
1.3 Applications
■ Low voltage rectification
■ High efficiency DC-to-DC conversion
■ Switch mode power supply
■ Inverse polarity protection
■ Low and medium power general applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward current Tsp≤ 55 °C - - 1.5 A
reverse voltage - - 20 V
forward voltage IF= 1.5 A
[1]
- 560 660 mV
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode.
3. Ordering information
Table 4: Ordering information
Type number Package
PMEG2015EH - plastic surface mounted package; 2 leads SOD123F
PMEG2015EJ SC-90 plastic surface mounted package; 2 leads SOD323F
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
[1]
12
12
sym001
001aab540
Name Description Version
4. Marking
Table 5: Marking codes
Type number Marking code
PMEG2015EH AD
PMEG2015EJ EL
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
reverse voltage - 20 V
forward current Tsp≤ 55 °C - 1.5 A
repetitive peak forward current tp≤ 1 ms; δ≤0.25 - 5.5 A
non-repetitive peak forward
current
total power dissipation T
PMEG2015EH
PMEG2015EJ
square wave;
t
=8ms
p
≤ 25 °C
amb
[1]
-9A
[1]
- 375 mW
[2]
- 830 mW
[1]
- 360 mW
[2]
- 830 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
9397 750 14916 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 7 April 2005 2 of 9
Philips Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
storage temperature −65 +150 °C
footprint.
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
PMEG2015EH
PMEG2015EJ
thermal resistance from
junction to solder point
PMEG2015EH - - 60 K/W
PMEG2015EJ - - 55 K/W
…continued
in free air
[1] [2]
- - 330 K/W
[2] [3]
- - 150 K/W
[1] [2]
- - 350 K/W
[2] [3]
- - 150 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and I
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
7. Characteristics
Table 8: Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
rating are available on request.
F(AV)
=25°C unless otherwise specified.
forward voltage IF=10mA
= 100 mA
I
F
= 500 mA
I
F
=1A
I
F
= 1.5 A
I
F
[1]
- 240 270 mV
[1]
- 300 350 mV
[1]
- 400 460 mV
[1]
- 480 550 mV
[1]
- 560 660 mV
reverse current VR=5V - 5 10 µA
=8V - 7 20 µA
V
R
=10V - 8 30 µA
V
R
=15V - 10 50 µA
V
R
=20V - 15 70 µA
V
R
diode capacitance VR=1V; f=1MHz - 40 50 pF
9397 750 14916 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 7 April 2005 3 of 9
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