Philips PMEG2015EA User Guide

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PMEG2015EA

Low V

(MEGA) Schottky barrier

F

diode

Product specification
Supersedes data of 2003 May 20

2004 Feb 03

Philips Semiconductors Product specification

Low VF (MEGA) Schottky barrier diode

FEATURES

• Forward current: 1.5 A

• Reverse voltage: 20 V

• Ultra high-speed switching

• Very low forward voltage

• Very small plastic SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stressprotection,encapsulatedin aSOD323 (SC-76)very
small SMD plastic package.

PMEG2015EA

PINNING

PIN DESCRIPTION

1 cathode
2 anode

21

Top view

Marking code: S5.
The marking bar indicates the cathode.

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

12

sym001

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PMEG2015EA − plastic surface mounted package; 2 leads SOD323

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
I

F

I

FSM

I

FRM

T
T
T

R

stg
j
amb

continuous reverse voltage − 20 V
continuous forward current Ts<55°C − 1.5 A
non-repetitive peak forward current tp= 8 ms square wave − 10 A
repetitive peak forward current tp= 1 ms; δ = ≤ 0.25 − 4.5 A
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C

2004 Feb 03 2

Philips Semiconductors Product specification

Low VF (MEGA) Schottky barrier diode

PMEG2015EA

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

continuous forward voltage see Fig.2; note 1

= 10 mA 240 270 mV

I

F

IF= 100 mA 300 350 mV
I

= 1000 mA 480 550 mV

F

IF= 1500 mA 560 660 mV

I

R

continuous reverse current see Fig.3; note 1

VR=5V 5 10 µA
VR=8V 7 20 µA
VR= 15 V 10 50 µA

C

d

diode capacitance VR= 5 V; f = 1 MHz;

19 25 pF

see Fig.4

Note

1. Pulse test: t

= 300 µs; δ = 0.02.

p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient note 1 450 K/W

note 2 210 K/W

R

th(j-s)

thermal resistance from junction to solder point note 3 90 K/W

Notes

1. Refer to SC-76 (SOD323) standard mounting conditions.

2. Device mounted on a printed-circuit board with copper clad 10 x 10 mm.

3. Soldering point of cathode tab.

2004 Feb 03 3