Philips PMEG2010EV User Guide
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M3D744
PMEG2010EV
Low V
MEGA Schottky barrier
F
diode
Product specification
Supersedes data of 2002 Jun 24
2003 Aug 20
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
FEATURES
• Forward current: 1 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small SMD package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection in a SOT666 ultra small SMD plastic
package.
PMEG2010EV
PINNING
PIN DESCRIPTION
1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode
handbook, halfpage
123
Marking code: F1.
Fig.1 Simplified outline (SOT666) and symbol.
456
1, 2
5, 6
3, 4
MHC310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FSM
continuous reverse voltage − 20 V
continuous forward current − 1A
non-repetitive peak forward current t = 8.3 ms half sinewave;
− 8A
JEDEC method; note 1
T
stg
T
j
T
amb
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
Note
1. Only valid if pins 3 and 4 are connected in parallel.
2003 Aug 20 2
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
PMEG2010EV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 405 K/W
note 2 215 K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. Mounted on printed circuit-board, 1 cm2 copper area.
Soldering
The only recommended soldering method is reflow soldering.
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
continuous forward voltage IF= 10 mA 240 270 mV
I
= 100 mA 300 350 mV
F
I
= 1000 mA; note 1; see Fig.2 480 550 mV
F
reverse current VR= 5 V; note 2 5 10 µA
V
= 8 V; note 2 7 20 µA
R
V
= 15 V; note 2; see Fig.3 10 50 µA
R
diode capacitance VR= 5 V; f = 1 MHz; see Fig.4 19 25 pF
Notes
1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm
2. Pulse test: tp= 300 µs; δ = 0.02.
2
copper solder land.
2003 Aug 20 3
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