Philips PMEG2010EA User Guide

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PMEG2010EA

Low V

(MEGA) Schottky barrier

F

diode

Product specification
Supersedes data of 2002 Dec 10

2004 Feb 06

Philips Semiconductors Product specification

Low VF (MEGA) Schottky barrier diode

FEATURES

• Forward current: 1 A

• Reverse voltage: 20 V

• Ultra high-speed switching

• Very low forward voltage

• Very small plastic SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stressprotection,encapsulatedin aSOD323 (SC-76)very
small SMD plastic package.

PMEG2010EA

PINNING

PIN DESCRIPTION

1 cathode
2 anode

lumns

Marking code: E1.
The marking bar indicates the cathode.

Fig.1 Simplified outline (SOD323; SC-76) and

12

MGU328

symbol.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

PMEG2010EA − plastic surface mounted package; 2 leads SOD323

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
I

F

I

FSM

R

continuous reverse voltage − 20 V
continuous forward current − 1A
non-repetitive peak forward current tp= 8.3 ms half sinewave;

− 5A

JEDEC method

T

stg

T

j

T

amb

storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C

2004 Feb 06 2

Philips Semiconductors Product specification

Low VF (MEGA) Schottky barrier diode

PMEG2010EA

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

continuous forward voltage see Fig.2; note 1

= 10 mA 240 270 mV

I

F

IF= 100 mA 300 350 mV
I

= 1000 mA 480 550 mV

F

I

R

continuous reverse current see Fig.3; note 1

VR=5V 5 10 µA
VR=8V 7 20 µA
VR= 15 V 10 50 µA

C

d

diode capacitance VR= 5 V; f = 1 MHz; see Fig.4 19 25 pF

Note

1. Pulsed test: t

= 300 µs; δ = 0.02.

p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient note 1 220 K/W

note 2 180 K/W

Notes

1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.

2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.

2004 Feb 06 3