Philips PMEG2010AEB User Guide
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DATA SH EET
M3D319
PMEG2010AEB
20 V, 1 A ultra low V
MEGA
F
Schottky barrier rectifier in
SOD523 package
Product specification 2003 Dec 03
Philips Semiconductors Product specification
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
FEATURES
• Forward current: 1.0 A
• Reverse voltage: 20 V
• Ultra low forward voltage
• Ultra small SMD package.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stressprotection,encapsulatedinaSOD523(SC-79)ultra
small plastic SMD package.
PMEG2010AEB
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
I
F
V
R
PINNING
Marking code: L6.
The marking bar indicates the cathode.
forward current 1 A
reverse voltage 20 V
PIN DESCRIPTION
1 cathode
2 anode
12
Top view
col001
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PMEG2010AEB − plastic surface mounted package; 2 leads SOD523
RELATED PRODUCTS
TYPE DESCRIPTION FEATURE
PMEG2005EB 0.5 A; 20 V very low VFMEGA Schottky rectifier Lower IR in same package
PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier Lower forward current, lower IR SOD323
(SC76)
2003 Dec 03 2
Philips Semiconductors Product specification
20 V, 1 A ultra low VF MEGA Schottky
PMEG2010AEB
barrier rectifier in SOD523 package
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
Note
1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PRare a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and I
THERMAL CHARACTERISTICS
continuous reverse voltage − 20 V
continuous forward current Ts≤ 55 °C − 1.0 A
repetitive peak forward current tp≤ 1 ms; δ≤0.5 − 3.5 A
non-repetitive peak forward current t= 8 ms square wave − 6A
storage temperature −65 +150 °C
junction temperature note 1 − 150 °C
operating ambient temperature note 1 −65 +150 °C
rating will be available on request.
F(AV)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
in free air; notes 1 and 2 400 K/W
ambient
R
th(j-s)
thermal resistance from junction to
notes 2 and 3 75 K/W
soldering point
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PRare a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and I
rating will be available on request.
F(AV)
3. Solder point of cathode tab.
2003 Dec 03 3
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