Philips PMEG2010AEB User Guide

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DISCRETE SEMICONDUCTORS

DATA SH EET

M3D319

PMEG2010AEB

20 V, 1 A ultra low V

MEGA

F

Schottky barrier rectifier in
SOD523 package

Product specification 2003 Dec 03

Philips Semiconductors Product specification

20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package

FEATURES

• Forward current: 1.0 A

• Reverse voltage: 20 V

• Ultra low forward voltage

• Ultra small SMD package.

APPLICATIONS

• Low voltage rectification

• High efficiency DC/DC conversion

• Voltage clamping

• Inverse-polarity protection

• Low power consumption applications.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stressprotection,encapsulatedinaSOD523(SC-79)ultra
small plastic SMD package.

PMEG2010AEB

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

I

F

V

R

PINNING

Marking code: L6.

The marking bar indicates the cathode.

forward current 1 A
reverse voltage 20 V

PIN DESCRIPTION

1 cathode
2 anode

12

Top view

col001

Fig.1 Simplified outline (SOD523; SC-79) and

symbol.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PMEG2010AEB − plastic surface mounted package; 2 leads SOD523

RELATED PRODUCTS

TYPE DESCRIPTION FEATURE

PMEG2005EB 0.5 A; 20 V very low VFMEGA Schottky rectifier Lower IR in same package
PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier Lower forward current, lower IR SOD323

(SC76)

2003 Dec 03 2

Philips Semiconductors Product specification

20 V, 1 A ultra low VF MEGA Schottky

PMEG2010AEB

barrier rectifier in SOD523 package

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

I

F

I

FRM

I

FSM

T

stg

T

j

T

amb

Note

1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PRare a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and I

THERMAL CHARACTERISTICS

continuous reverse voltage − 20 V
continuous forward current Ts≤ 55 °C − 1.0 A
repetitive peak forward current tp≤ 1 ms; δ≤0.5 − 3.5 A
non-repetitive peak forward current t= 8 ms square wave − 6A
storage temperature −65 +150 °C
junction temperature note 1 − 150 °C
operating ambient temperature note 1 −65 +150 °C

rating will be available on request.

F(AV)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to

in free air; notes 1 and 2 400 K/W

ambient

R

th(j-s)

thermal resistance from junction to

notes 2 and 3 75 K/W

soldering point

Notes

1. Refer to SOD523 (SC-79) standard mounting conditions.

2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PRare a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and I

rating will be available on request.

F(AV)

3. Solder point of cathode tab.

2003 Dec 03 3

Philips Semiconductors Product specification

20 V, 1 A ultra low VF MEGA Schottky

PMEG2010AEB

barrier rectifier in SOD523 package

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

I

R

C

d

Note

1. Pulse test: t

forward voltage IF= 0.1 mA 30 60 mV

= 1 mA 80 110 mV

I

F

IF= 10 mA 140 190 mV
I

= 100 mA 230 290 mV

F

IF= 1000 mA 510 620 mV

continuous reverse current VR= 10 V; note 1 0.17 0.6 mA

VR= 20 V; note 1 0.32 1.5 mA

diode capacitance VR= 1 V; f = 1 MHz 19 25 pF

≤ 300 µs; δ≤0.02.

p

2003 Dec 03 4

Philips Semiconductors Product specification

20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package

GRAPHICAL DATA

3

10

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

0 0.80.60.2 0.4

(1) T
(2) T
(3) T

amb
amb
amb

=85°C.
=25°C.
= −40 °C.

Fig.2 Forward current as a function of forward

voltage; typical values.

com001

VF (V)

PMEG2010AEB

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

1

−1

10

0816

(1) T
(2) T
(3) T

amb
amb
amb

=85°C.
=25°C.
= −40 °C.

(1)

(2)

(3)

Fig.3 Reverse current as a function of reverse

voltage; typical values.

MLE228

VR (V)

24

30

C

d

(pF)

25

20

15

10

5

0

02015510

f = 1 MHz; T

amb

=25°C.

com002

VR (V)

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

2003 Dec 03 5

Philips Semiconductors Product specification

20 V, 1 A ultra low VF MEGA Schottky

PMEG2010AEB

barrier rectifier in SOD523 package

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads SOD523V

A

c

v M

H

E

D

12

b

E

p

(1)

OUTLINE
VERSION

SOD523V SC-79

IEC JEDEC JEITA

A

REFERENCES

A

0 0.5 1 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT b

Note

1. The marking bar indicates the cathode.

mm

A

0.65

0.58

0.34

0.26

p

0.17

0.11

PROJECTION

cD

1.25

1.15

EUROPEAN

E

0.85

0.75

H

E

1.65

1.55

ISSUE DATE

00-12-07
02-04-19

v

0.1

2003 Dec 03 6

Philips Semiconductors Product specification

20 V, 1 A ultra low VF MEGA Schottky

PMEG2010AEB

barrier rectifier in SOD523 package

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomersusingorsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Dec 03 7

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R76/01/pp8 Date of release: 2003 Dec 03 Document order number: 9397 750 11911

SCA75