Philips PMEG2005AEV, PMEG3005AEV, PMEG4005AEV Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
Very low V
MEGA Schottky barrier
F
rectifiers
Product specification 2003 Aug 20
Philips Semiconductors Product specification
Very low VF MEGA
Schottky barrier rectifiers
FEATURES
• Very low forward voltage
• High surge current
• Ultra small plastic SMD package.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
I
F
V
R
PINNING
forward current 0.5 A
reverse voltage
PMEG2005AEV 20 V
PMEG3005AEV 30 V
PMEG4005AEV 40 V
PIN DESCRIPTION
1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode
handbook, halfpage
123
456
1, 2
5, 6
Fig.1 Simplified outline (SOT666 and symbol).
MARKING
TYPE NUMBER MARKING CODE
PMEG2005AEV G1
PMEG3005AEV G2
PMEG4005AEV G3
RELATED PRODUCTS
TYPE NUMBER DESCRIPTION FEATURE
PMEGxx05AEA 0.5 A; 20/30/40 V very low V
PMEG2005EB 0.5 A; 20 V very low V
PMEG2010EA 1 A; 20 V very low V
F
MEGA Schottky rectifier higher forward current
F
MEGA Schottky rectifier SOD323 (SC-76) package
F
MEGA Schottky rectifier SOD523 (SC-79) package
3, 4
MHC310
2003 Aug 20 2
Philips Semiconductors Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage
PMEG2005AEV − 20 V
PMEG3005AEV − 30 V
PMEG4005AEV − 40 V
I
F
I
FRM
I
FSM
T
T
T
j
amb
stg
continuous forward current note 1 − 0.5 A
repetitive peak forward current tp≤ 1 ms; δ≤0.5; note 2 − 3.5 A
non-repetitive peak forward current tp= 8 ms; square wave; note 2 − 10 A
junction temperature note 3 − 150 °C
operating ambient temperature note 3 −65 +150 °C
storage temperature −65 +150 °C
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. ForSchottkybarrierdiodesthermalrunawayhastobeconsidered,asinsomeapplications,thereversepowerlosses
(P
) are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and I
rating will be available on request.
F(AV)
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-s
thermal resistance from junction to
ambient
thermal resistance from junction to
in free air; notes 1 and 2 405 K/W
in free air; notes 2 and 3 215 K/W
note 4 80 K/W
soldering point
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
are a significant part of the total power losses. Nomograms for determination of the reverse power losses PRand
R
I
rating will be available on request.
F(AV)
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
2003 Aug 20 3
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