PMEG2005AEL
PMEG2005AEL
0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package
Rev. 02 — 27 April 2004 |
Product data sheet |
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1.Product profile
1.1General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package.
1.2Features
■Forward current: 0.5 A
■Reverse voltage: 20 V
■Ultra low forward voltage
■Leadless ultra small plastic package
■Power dissipation comparable to SOT23.
1.3Applications
■Ultra high-speed switching
■Voltage clamping
■Protection circuits
■Low voltage rectification
■High efficiency DC-to-DC conversion
■Low power consumption applications.
1.4Quick reference data
Table 1: |
Quick reference data |
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Symbol |
Parameter |
Value |
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Unit |
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IF |
forward current |
0.5 |
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A |
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VR |
reverse voltage |
20 |
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V |
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Philips Semiconductors |
PMEG2005AEL |
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0.5 A ultra low VF MEGA Schottky rectifier |
2. Pinning information
Table 2: |
Discrete pinning |
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Pin |
Description |
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Simplified outline |
Symbol |
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1 |
cathode |
[1] |
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1 |
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2 |
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2 |
anode |
1 |
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2 |
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sym001 |
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Bottom view |
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Top view
001aaa332
[1]The marking bar indicates the cathode.
3.Ordering information
Table 3: Ordering information
Type number |
Package |
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Name |
Description |
Version |
PMEG2005AEL |
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leadless ultra small plastic package; 2 terminals; |
SOD882 |
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body 1.0 × 0.6 × 0.5 mm |
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4. Marking
Table 4: Marking
Type number |
Marking code |
PMEG2005AEL |
F2 |
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5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
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Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
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VR |
continuous reverse voltage |
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- |
20 |
V |
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IF |
continuous forward current |
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- |
0.5 |
A |
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IFRM |
repetitive peak forward current |
tp ≤ 1 ms; δ ≤ 0.25 |
- |
2.5 |
A |
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IFSM |
non-repetitive peak forward |
t = 8 ms square |
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3 |
A |
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current |
wave |
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Tj |
junction temperature |
[1] |
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150 |
°C |
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Tamb |
operating ambient temperature |
[1] |
−65 |
+150 |
°C |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
9397 750 13201 |
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© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 02 — 27 April 2004 |
2 of 8 |
Philips Semiconductors |
PMEG2005AEL |
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0.5 A ultra low VF MEGA Schottky rectifier |
[1]For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request.
6.Thermal characteristics
Table 6: |
Thermal characteristics |
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Symbol |
Parameter |
Conditions |
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Value |
Unit |
Rth(j-a) |
thermal resistance from junction to |
in free air |
[1] |
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[2] |
500 |
K/W |
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ambient |
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[1]Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
[2]For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request.
7.Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified
Symbol |
Parameter |
Conditions |
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Typ |
Max |
Unit |
VF |
continuous forward |
see Figure 1; |
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voltage |
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IF = 0.1 mA |
25 |
60 |
mV |
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IF = 1 mA |
75 |
110 |
mV |
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IF = 10 mA |
135 |
190 |
mV |
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IF = 100 mA |
220 |
290 |
mV |
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IF = 500 mA |
375 |
440 |
mV |
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IR |
continuous reverse |
see Figure 2; |
[1] |
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current |
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VR = 10 V |
210 |
600 |
μA |
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VR = 20 V |
370 |
1500 |
μA |
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Cd |
diode capacitance |
VR = 1 V; f = 1 MHz; |
19 |
25 |
pF |
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see Figure 3 |
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[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
9397 750 13201 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 02 — 27 April 2004 |
3 of 8 |