Philips PMEG2005AEL Technical data

Philips PMEG2005AEL Technical data

PMEG2005AEL

PMEG2005AEL

0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package

Rev. 02 — 27 April 2004

Product data sheet

 

 

 

 

 

 

1.Product profile

1.1General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package.

1.2Features

Forward current: 0.5 A

Reverse voltage: 20 V

Ultra low forward voltage

Leadless ultra small plastic package

Power dissipation comparable to SOT23.

1.3Applications

Ultra high-speed switching

Voltage clamping

Protection circuits

Low voltage rectification

High efficiency DC-to-DC conversion

Low power consumption applications.

1.4Quick reference data

Table 1:

Quick reference data

 

 

 

 

 

Symbol

Parameter

Value

 

Unit

IF

forward current

0.5

 

A

VR

reverse voltage

20

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

PMEG2005AEL

 

 

 

0.5 A ultra low VF MEGA Schottky rectifier

2. Pinning information

Table 2:

Discrete pinning

 

 

 

 

 

 

 

 

 

 

 

Pin

Description

 

 

Simplified outline

Symbol

 

 

1

cathode

[1]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

2

anode

1

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

sym001

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Bottom view

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Top view

001aaa332

[1]The marking bar indicates the cathode.

3.Ordering information

Table 3: Ordering information

Type number

Package

 

 

 

Name

Description

Version

PMEG2005AEL

-

leadless ultra small plastic package; 2 terminals;

SOD882

 

 

body 1.0 × 0.6 × 0.5 mm

 

 

 

 

 

4. Marking

Table 4: Marking

Type number

Marking code

PMEG2005AEL

F2

 

 

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

 

Symbol

Parameter

Conditions

Min

Max

Unit

 

VR

continuous reverse voltage

 

 

-

20

V

 

IF

continuous forward current

 

 

-

0.5

A

 

IFRM

repetitive peak forward current

tp 1 ms; δ ≤ 0.25

-

2.5

A

 

IFSM

non-repetitive peak forward

t = 8 ms square

-

3

A

 

 

current

wave

 

 

 

 

 

 

 

 

 

 

 

Tj

junction temperature

[1]

-

150

°C

 

 

 

 

Tamb

operating ambient temperature

[1]

65

+150

°C

 

 

 

 

Tstg

storage temperature

 

 

65

+150

°C

9397 750 13201

 

 

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 27 April 2004

2 of 8

Philips Semiconductors

PMEG2005AEL

 

 

 

0.5 A ultra low VF MEGA Schottky rectifier

[1]For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request.

6.Thermal characteristics

Table 6:

Thermal characteristics

 

 

 

 

 

 

Symbol

Parameter

Conditions

 

 

 

Value

Unit

Rth(j-a)

thermal resistance from junction to

in free air

[1]

 

[2]

500

K/W

 

 

 

ambient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

[1]Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.

[2]For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request.

7.Characteristics

Table 7: Characteristics

Tamb = 25 °C unless otherwise specified

Symbol

Parameter

Conditions

 

Typ

Max

Unit

VF

continuous forward

see Figure 1;

 

 

 

 

 

voltage

 

 

 

 

 

 

IF = 0.1 mA

25

60

mV

 

 

 

 

IF = 1 mA

75

110

mV

 

 

IF = 10 mA

135

190

mV

 

 

IF = 100 mA

220

290

mV

 

 

IF = 500 mA

375

440

mV

IR

continuous reverse

see Figure 2;

[1]

 

 

 

 

 

 

 

 

current

 

 

 

 

 

 

VR = 10 V

210

600

μA

 

 

 

 

VR = 20 V

370

1500

μA

Cd

diode capacitance

VR = 1 V; f = 1 MHz;

19

25

pF

 

 

see Figure 3

 

 

 

 

 

 

 

 

 

 

 

[1]Pulse test: tp 300 μs; δ ≤ 0.02.

9397 750 13201

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 27 April 2004

3 of 8

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