Philips PMEG1020EH, PMEG1020EJ User Guide
查询PMEG1020EH供应商
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
Rev. 03 — 14 April 2005 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead plastic SMD
packages.
Table 1: Product overview
Type number Package Configuration
PMEG1020EH SOD123F - single diode
PMEG1020EJ SOD323F SC-90 single diode
Philips JEITA
1.2 Features
■ Forward current: ≤ 2A
■ Reverse voltage: ≤ 10 V
■ Ultra low forward voltage
■ Small and flat lead SMD plastic packages
1.3 Applications
■ Low voltage rectification
■ High efficiency DC-to-DC conversion
■ Switch mode power supply
■ Inverse polarity protection
■ Low power consumption applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward current Tsp≤ 55 °C --2A
reverse voltage - - 10 V
forward voltage IF=2A
[1]
- 350 460 mV
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode.
3. Ordering information
Table 4: Ordering information
Type number Package
PMEG1020EH - plastic surface mounted package; 2 leads SOD123F
PMEG1020EJ SC-90 plastic surface mounted package; 2 leads SOD323F
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low VFMEGA Schottky barrier rectifiers
[1]
12
12
sym001
001aab540
Name Description Version
4. Marking
Table 5: Marking codes
Type number Marking code
PMEG1020EH A8
PMEG1020EJ CB
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
reverse voltage - 10 V
forward current Tsp≤ 55 °C-2A
repetitive peak forward current tp≤ 1 ms; δ≤0.5 - 7 A
non-repetitive peak forward
current
total power dissipation T
PMEG1020EH
PMEG1020EJ
square wave;
t
=8ms
p
≤ 25 °C
amb
-9A
[1]
- 375 mW
[2]
- 830 mW
[1]
[2]
- 830 mW
360 mW
junction temperature - 150 °C
9397 750 14929 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 14 April 2005 2 of 9
Philips Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low VFMEGA Schottky barrier rectifiers
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from junction
to ambient
PMEG1020EH
PMEG1020EJ
thermal resistance from junction
to solder point
PMEG1020EH - - 60 K/W
PMEG1020EJ - - 55 K/W
…continued
in free air
[1] [2]
- - 330 K/W
[2] [3]
- - 150 K/W
[1] [2]
- - 350 K/W
[2] [3]
- - 150 K/W
[4]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and I
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
7. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
rating are available on request.
F(AV)
forward voltage IF= 0.01 A
= 0.1 A
I
F
=1A
I
F
=2A
I
F
[1]
- 100 130 mV
[1]
- 170 200 mV
[1]
- 280 350 mV
[1]
- 350 460 mV
reverse current VR= 5 V - 0.7 2 mA
= 8 V - 1 2.5 mA
V
R
= 10 V - 1.2 3 mA
V
R
diode capacitance VR= 5 V; f = 1 MHz - 40 50 pF
9397 750 14929 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 14 April 2005 3 of 9
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