Philips PMEG1020EH, PMEG1020EJ User Guide

查询PMEG1020EH供应商

PMEG1020EH; PMEG1020EJ

10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers

Rev. 03 — 14 April 2005 Product data sheet

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead plastic SMD
packages.

Table 1: Product overview

Type number Package Configuration

PMEG1020EH SOD123F - single diode
PMEG1020EJ SOD323F SC-90 single diode

Philips JEITA

1.2 Features

■ Forward current: ≤ 2A

■ Reverse voltage: ≤ 10 V

■ Ultra low forward voltage

■ Small and flat lead SMD plastic packages

1.3 Applications

■ Low voltage rectification

■ High efficiency DC-to-DC conversion

■ Switch mode power supply

■ Inverse polarity protection

■ Low power consumption applications

1.4 Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

I

F

V

R

V

F

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

forward current Tsp≤ 55 °C --2A
reverse voltage - - 10 V
forward voltage IF=2A

[1]

- 350 460 mV

Philips Semiconductors

2. Pinning information

Table 3: Pinning

Pin Description Simplified outline Symbol

1 cathode
2 anode

[1] The marking bar indicates the cathode.

3. Ordering information

Table 4: Ordering information

Type number Package

PMEG1020EH - plastic surface mounted package; 2 leads SOD123F
PMEG1020EJ SC-90 plastic surface mounted package; 2 leads SOD323F

PMEG1020EH; PMEG1020EJ

10 V, 2 A ultra low VFMEGA Schottky barrier rectifiers

[1]

12

12

sym001

001aab540

Name Description Version

4. Marking

Table 5: Marking codes

Type number Marking code

PMEG1020EH A8
PMEG1020EJ CB

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

R

I

F

I

FRM

I

FSM

P

tot

T

j

reverse voltage - 10 V
forward current Tsp≤ 55 °C-2A
repetitive peak forward current tp≤ 1 ms; δ≤0.5 - 7 A
non-repetitive peak forward

current
total power dissipation T

PMEG1020EH

PMEG1020EJ

square wave;
t

=8ms

p

≤ 25 °C

amb

-9A

[1]

- 375 mW

[2]

- 830 mW

[1]
[2]

- 830 mW

360 mW

junction temperature - 150 °C

9397 750 14929 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 03 — 14 April 2005 2 of 9

Philips Semiconductors

PMEG1020EH; PMEG1020EJ

10 V, 2 A ultra low VFMEGA Schottky barrier rectifiers

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

ambient temperature −65 +150 °C
storage temperature −65 +150 °C

6. Thermal characteristics

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

thermal resistance from junction
to ambient

PMEG1020EH

PMEG1020EJ

thermal resistance from junction
to solder point

PMEG1020EH - - 60 K/W
PMEG1020EJ - - 55 K/W

…continued

in free air

[1] [2]

- - 330 K/W

[2] [3]

- - 150 K/W

[1] [2]

- - 350 K/W

[2] [3]

- - 150 K/W

[4]

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and I
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.

7. Characteristics

Table 8: Characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

V

F

I

R

C

d

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

rating are available on request.

F(AV)

forward voltage IF= 0.01 A

= 0.1 A

I

F

=1A

I

F

=2A

I

F

[1]

- 100 130 mV

[1]

- 170 200 mV

[1]

- 280 350 mV

[1]

- 350 460 mV

reverse current VR= 5 V - 0.7 2 mA

= 8 V - 1 2.5 mA

V

R

= 10 V - 1.2 3 mA

V

R

diode capacitance VR= 5 V; f = 1 MHz - 40 50 pF

9397 750 14929 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 03 — 14 April 2005 3 of 9