Philips PMEG1020EH, PMEG1020EJ User Guide

PMEG1020EH

PMEG1020EH; PMEG1020EJ

10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers

Rev. 03 — 14 April 2005	Product data sheet

1.Product profile

1.1General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small and flat lead plastic SMD packages.

Table 1: Product overview

Type number	Package		Configuration
	Philips	JEITA
PMEG1020EH	SOD123F	-	single diode
PMEG1020EJ	SOD323F	SC-90	single diode

1.2Features

■Forward current: ≤ 2 A

■Reverse voltage: ≤ 10 V

■Ultra low forward voltage

■Small and flat lead SMD plastic packages

1.3Applications

■Low voltage rectification

■High efficiency DC-to-DC conversion

■Switch mode power supply

■Inverse polarity protection

■Low power consumption applications

1.4Quick reference data

Table 2:		Quick reference data
Symbol		Parameter	Conditions		Min	Typ	Max	Unit
IF		forward current	Tsp ≤ 55 °C	-		-	2	A
VR		reverse voltage		-		-	10	V
V	F	forward voltage	I = 2 A	[1]	-	350	460	mV
			F

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Philips Semiconductors			PMEG1020EH; PMEG1020EJ
			10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers

2. Pinning information

Table 3:	Pinning
Pin	Description			Simplified outline					Symbol
1	cathode	[1]
									1		2
2	anode
					1			2
										sym001
							001aab540

[1]The marking bar indicates the cathode.

3.Ordering information

Table 4: Ordering information

Type number	Package
	Name	Description	Version
PMEG1020EH	-	plastic surface mounted package; 2 leads	SOD123F
PMEG1020EJ	SC-90	plastic surface mounted package; 2 leads	SOD323F

4. Marking

Table 5: Marking codes

Type number	Marking code
PMEG1020EH	A8
PMEG1020EJ	CB

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
VR	reverse voltage			-	10	V
IF	forward current	Tsp ≤ 55 °C		-	2	A
IFRM	repetitive peak forward current	tp ≤ 1 ms; δ ≤ 0.5		-	7	A
IFSM	non-repetitive peak forward	square wave;		-	9	A
	current	tp = 8 ms
Ptot	total power dissipation	Tamb ≤ 25 °C
	PMEG1020EH	[1]		-	375	mW
		[2]		-	830	mW
	PMEG1020EJ	[1]			360	mW
		[2]		-	830	mW
Tj	junction temperature			-	150	°C

9397 750 14929

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 03 — 14 April 2005

2 of 9

Philips Semiconductors				PMEG1020EH; PMEG1020EJ
					10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
			Table 6:	Limiting values …continued
			In accordance with the Absolute Maximum Rating System (IEC 60134).
			Symbol	Parameter	Conditions	Min	Max	Unit
			Tamb	ambient temperature		−65	+150	°C
			Tstg	storage temperature		−65	+150	°C

[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6.Thermal characteristics

Table 7:	Thermal characteristics
Symbol		Parameter	Conditions				Min	Typ	Max	Unit
Rth(j-a)		thermal resistance from junction	in free air
		to ambient
		PMEG1020EH	[1] [2]				-	-	330	K/W
			[2] [3]				-	-	150	K/W
		PMEG1020EJ	[1] [2]				-	-	350	K/W
			[2] [3]				-	-	150	K/W
Rth(j-sp)		thermal resistance from junction	[4]
		to solder point
		PMEG1020EH					-	-	60	K/W
		PMEG1020EJ					-	-	55	K/W

[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating are available on request.

[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4]Soldering point of cathode tab.

7.Characteristics

Table 8: Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol		Parameter	Conditions		Min	Typ	Max	Unit
V	F	forward voltage	I = 0.01 A	[1]	-	100	130	mV
			F
			IF = 0.1 A	[1]	-	170	200	mV
			IF = 1 A	[1]	-	280	350	mV
			IF = 2 A	[1]	-	350	460	mV
IR		reverse current	VR = 5 V		-	0.7	2	mA
			VR = 8 V		-	1	2.5	mA
			VR = 10 V		-	1.2	3	mA
Cd		diode capacitance	VR = 5 V; f = 1 MHz		-	40	50	pF

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

9397 750 14929

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 03 — 14 April 2005

3 of 9