Philips PMBZ5247B, PMBZ5250B, PMBZ5237B, PMBZ5256B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 17
Philips Semiconductors Product specification
Voltage regulator diodes PMBZ5226B to PMBZ5257B
FEATURES
• Total power dissipation:
max. 250 mW
• Tolerance series: ±5%
• Working voltage range:
nom. 3.3 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The series consists of 32 types with
nominal working voltages from
3.3 to 75 V.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
2
n.c.
1
3
MAM243
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
PMBZ5226B ∗8A PMBZ5234B ∗8J PMBZ5242B ∗8S PMBZ5250B 81A
PMBZ5227B ∗8B PMBZ5235B ∗8K PMBZ5243B ∗8T PMBZ5251B 81B
PMBZ5228B ∗8C PMBZ5236B ∗8L PMBZ5244B ∗8U PMBZ5252B 81C
PMBZ5229B ∗8D PMBZ5237B ∗8M PMBZ5245B ∗8V PMBZ5253B 81D
PMBZ5230B ∗8E PMBZ5238B ∗8N PMBZ5246B ∗8W PMBZ5254B 81E
PMBZ5231B ∗8F PMBZ5239B ∗8P PMBZ5247B ∗8X PMBZ5255B 81F
PMBZ5232B ∗8G PMBZ5240B ∗8Q PMBZ5248B ∗8Y PMBZ5256B 81G
PMBZ5233B ∗8H PMBZ5241B ∗8R PMBZ5249B ∗8Z PMBZ5257B 81H
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1999 May 17 2
Philips Semiconductors Product specification
Voltage regulator diodes PMBZ5226B to PMBZ5257B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
2. Device mounted on an FR4 printed circuit-board.
continuous forward current − 200 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge
total power dissipation T
non-repetitive peak reverse power
dissipation
=25°C; note 1 − 300 mW
amb
T
=25°C; note 2 − 250 mW
amb
tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.2
see Table
“Per type”
− 40 W
storage temperature −65 +150 °C
junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 200 mA; see Fig.3 1.1 V
1999 May 17 3
1999 May 17 4
Per type
=25°C unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes PMBZ5226B to PMBZ5257B
TYPE No.
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
(1)
at IZ= 0.25 mA
r
(Ω)
dif
NOM. MAX. TYP. MAX. MAX. MAX.
TEMP. COEFF.
SZ(%/K)
(2)
at I
Z
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
Cd(pF)
at f = 1 MHz;
at VR=0V
REVERSE CURRENTat
REVERSE VOLTAGE
IR (µA)
V
R
(V)
NON-REPETITIVE PEAK
REVERSE CURRENT
I
(A) at tp= 100 µs;
ZSM
T
PMBZ5226B 3.3 1600 −0.064 20 450 25 1.0 6.0
PMBZ5227B 3.6 1700 −0.065 20 450 15 1.0 6.0
PMBZ5228B 3.9 1900 −0.063 20 450 10 1.0 6.0
PMBZ5229B 4.3 2000 −0.058 20 450 5 1.0 6.0
PMBZ5230B 4.7 2000 −0.047 20 450 5 1.0 6.0
PMBZ5231B 5.1 2000 −0.013 20 300 5 2.0 6.0
PMBZ5232B 5.6 1600 +0.023 20 300 5 3.0 6.0
PMBZ5233B 6.0 1600 +0.023 20 300 5 3.5 6.0
PMBZ5234B 6.2 1000 +0.039 20 200 5 4.0 6.0
PMBZ5235B 6.8 750 +0.040 20 200 3 5.0 6.0
PMBZ5236B 7.5 500 +0.047 20 150 3 6.0 4.0
PMBZ5237B 8.2 500 +0.052 20 150 3 6.5 4.0
PMBZ5238B 8.7 600 +0.053 20 150 3 6.5 3.5
PMBZ5239B 9.1 600 +0.055 20 150 3 7.0 3.0
PMBZ5240B 10 600 +0.055 20 90 3 8.0 3.0
PMBZ5241B 11 600 +0.058 20 85 2 8.4 2.5
PMBZ5242B 12 600 +0.062 20 85 1 9.1 2.5
PMBZ5243B 13 600 +0.065 9.5 80 0.5 9.9 2.5
PMBZ5244B 14 600 +0.067 9.0 80 0.1 10 2.0
PMBZ5245B 15 600 +0.073 8.5 75 0.1 11 2.0
PMBZ5246B 16 600 +0.073 7.8 75 0.1 12 1.5
PMBZ5247B 17 600 +0.073 7.4 75 0.1 13 1.5
PMBZ5248B 18 600 +0.078 7.0 70 0.1 14 1.5
PMBZ5249B 19 600 +0.078 6.6 70 0.1 14 1.5
PMBZ5250B 20 600 +0.080 6.2 60 0.1 15 1.5
PMBZ5251B 22 600 +0.080 5.6 60 0.1 17 1.25
amb
=25°C
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