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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 17
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Philips Semiconductors Product specification
Voltage regulator diodes PMBZ5226B to PMBZ5257B
FEATURES
• Total power dissipation:
max. 250 mW
• Tolerance series: ±5%
• Working voltage range:
nom. 3.3 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The series consists of 32 types with
nominal working voltages from
3.3 to 75 V.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
2
n.c.
1
3
MAM243
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
PMBZ5226B ∗8A PMBZ5234B ∗8J PMBZ5242B ∗8S PMBZ5250B 81A
PMBZ5227B ∗8B PMBZ5235B ∗8K PMBZ5243B ∗8T PMBZ5251B 81B
PMBZ5228B ∗8C PMBZ5236B ∗8L PMBZ5244B ∗8U PMBZ5252B 81C
PMBZ5229B ∗8D PMBZ5237B ∗8M PMBZ5245B ∗8V PMBZ5253B 81D
PMBZ5230B ∗8E PMBZ5238B ∗8N PMBZ5246B ∗8W PMBZ5254B 81E
PMBZ5231B ∗8F PMBZ5239B ∗8P PMBZ5247B ∗8X PMBZ5255B 81F
PMBZ5232B ∗8G PMBZ5240B ∗8Q PMBZ5248B ∗8Y PMBZ5256B 81G
PMBZ5233B ∗8H PMBZ5241B ∗8R PMBZ5249B ∗8Z PMBZ5257B 81H
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1999 May 17 2
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Philips Semiconductors Product specification
Voltage regulator diodes PMBZ5226B to PMBZ5257B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
2. Device mounted on an FR4 printed circuit-board.
continuous forward current − 200 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge
total power dissipation T
non-repetitive peak reverse power
dissipation
=25°C; note 1 − 300 mW
amb
T
=25°C; note 2 − 250 mW
amb
tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.2
see Table
“Per type”
− 40 W
storage temperature −65 +150 °C
junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 200 mA; see Fig.3 1.1 V
1999 May 17 3
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1999 May 17 4
Per type
=25°C unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes PMBZ5226B to PMBZ5257B
TYPE No.
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
(1)
at IZ= 0.25 mA
r
(Ω)
dif
NOM. MAX. TYP. MAX. MAX. MAX.
TEMP. COEFF.
SZ(%/K)
(2)
at I
Z
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
Cd(pF)
at f = 1 MHz;
at VR=0V
REVERSE CURRENTat
REVERSE VOLTAGE
IR (µA)
V
R
(V)
NON-REPETITIVE PEAK
REVERSE CURRENT
I
(A) at tp= 100 µs;
ZSM
T
PMBZ5226B 3.3 1600 −0.064 20 450 25 1.0 6.0
PMBZ5227B 3.6 1700 −0.065 20 450 15 1.0 6.0
PMBZ5228B 3.9 1900 −0.063 20 450 10 1.0 6.0
PMBZ5229B 4.3 2000 −0.058 20 450 5 1.0 6.0
PMBZ5230B 4.7 2000 −0.047 20 450 5 1.0 6.0
PMBZ5231B 5.1 2000 −0.013 20 300 5 2.0 6.0
PMBZ5232B 5.6 1600 +0.023 20 300 5 3.0 6.0
PMBZ5233B 6.0 1600 +0.023 20 300 5 3.5 6.0
PMBZ5234B 6.2 1000 +0.039 20 200 5 4.0 6.0
PMBZ5235B 6.8 750 +0.040 20 200 3 5.0 6.0
PMBZ5236B 7.5 500 +0.047 20 150 3 6.0 4.0
PMBZ5237B 8.2 500 +0.052 20 150 3 6.5 4.0
PMBZ5238B 8.7 600 +0.053 20 150 3 6.5 3.5
PMBZ5239B 9.1 600 +0.055 20 150 3 7.0 3.0
PMBZ5240B 10 600 +0.055 20 90 3 8.0 3.0
PMBZ5241B 11 600 +0.058 20 85 2 8.4 2.5
PMBZ5242B 12 600 +0.062 20 85 1 9.1 2.5
PMBZ5243B 13 600 +0.065 9.5 80 0.5 9.9 2.5
PMBZ5244B 14 600 +0.067 9.0 80 0.1 10 2.0
PMBZ5245B 15 600 +0.073 8.5 75 0.1 11 2.0
PMBZ5246B 16 600 +0.073 7.8 75 0.1 12 1.5
PMBZ5247B 17 600 +0.073 7.4 75 0.1 13 1.5
PMBZ5248B 18 600 +0.078 7.0 70 0.1 14 1.5
PMBZ5249B 19 600 +0.078 6.6 70 0.1 14 1.5
PMBZ5250B 20 600 +0.080 6.2 60 0.1 15 1.5
PMBZ5251B 22 600 +0.080 5.6 60 0.1 17 1.25
amb
=25°C