Philips PMBTH81 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBTH81
PNP 1 GHz switching transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
PNP 1 GHz switching transistor PMBTH81
FEATURES
• Low cost
• High transition frequency.
PINNING
PIN DESCRIPTION
Code: V31
page
3
1 base
DESCRIPTION
The PMBTH81 is a general purpose
silicon pnp transistor, encapsulated in
a SOT23 plastic envelope. Its
2 emitter
3 collector
12
Top view
MSB003
complement is the PMBTH10.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
P
C
C
f
CBO
CEO
tot
ce
cb
T
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 20 V
total power dissipation Ts=45°C (note 1) − 400 mW
collector-emitter capacitance VCB= 10 V; IB= 0; f = 1 MHz − 0.65 pF
collector-base capacitance VCB= 10 V; IE= 0; f = 1 MHz − 0.85 pF
transition frequency VCE= 10 V; IC= 5 mA;
f = 100 MHz; T
amb
=25°C
600 − MHz
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
Philips Semiconductors Product specification
PNP 1 GHz switching transistor PMBTH81
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current − 40 mA
total power dissipation Ts=45°C (note 1) − 400 mW
storage temperature −65 150 °C
junction temperature − 150 °C
from junction to soldering point (note 1) 260 K/W
Note
1. T
is the temperature at the soldering point of the collector tab.
s
CHARACTERISTICS
= 25 °C
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
collector-base breakdown voltage open emitter; IC=10µA; IE=0 20 − V
collector-emitter breakdown
open base; IC= 1 mA; IB=0 20 − V
voltage
V
(BR)EBO
V
CE sat
V
BE on
I
CBO
I
EBO
h
FE
C
ce
C
cb
f
T
emitter-base breakdown voltage open collector; IE=10µA; IC=0 3 − V
collector-emitter saturation voltage IC= 5 mA; IB= 0.5 mA − 0.5 V
base-emitter ON voltage VCE= 10 V; IC= 5 mA − 0.9 V
collector-base cut-off current VCB= 10 V; IE=0 − 100 nA
emitter-base cut-off current VEB= 2 V; IC=0 − 100 nA
DC current gain VCE= 10 V; IC= 5 mA 60 −
collector-emitter capacitance VCB= 10 V; IB= 0; f = 1 MHz − 0.65 pF
collector-base capacitance VCB= 10 V; IE= 0; f = 1 MHz − 0.85 pF
transition frequency VCE= 10 V; IC= 5 mA;
f = 100 MHz; T
amb
=25°C
600 − MHz
September 1995 3
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