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PMBTH10
Datasheet
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Philips PMBTH10 Datasheet

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DISCRETE SEMICONDUCTORS
DATA SH EET
PMBTH10
NPN 1 GHz general purpose switching transistor
Product specification File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
FEATURES
• Low cost
• High power gain.
PINNING
PIN DESCRIPTION
Code: V30
page
3
1 base
DESCRIPTION
The PMBTH10 is a general purpose silicon npn transistor, encapsulated in
2 emitter 3 collector
12
Top view
MSB003
a SOT23 plastic envelope. Its pnp complement is the PMBTH81.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
P
tot
h
FE
C
re
collector-base voltage open emitter − 30 V collector-emitter voltage open base − 25 V emitter-base voltage open collector − 3V total power dissipation Ts=45°C (note 1) − 400 mW DC current gain VCE= 10 V; IC= 4 mA 60 − collector-emitter feedback
VCB= 10 V; IE= 0; f = 1 MHz − 0.7 pF
capacitance
C
rb
collector-base feedback
VCB= 10 V; IE= 0; f = 1 MHz 0.35 0.65 pF
capacitance
f
T
r
bCc
transition frequency VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
collector-base time constant VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
650 − MHz
− 9ps
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 30 V collector-emitter voltage open base − 25 V emitter-base voltage open collector − 3V DC collector current − 40 mA total power dissipation Ts=45°C (note 1) − 400 mW storage temperature −65 150 °C junction temperature − 150 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-s
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE sat
V
BE on
I
CBO
I
EBO
h
FE
C
re
C
rb
f
T
r
bCc
from junction to soldering point (note 1) 260 K/W
collector-base breakdown voltage open emitter; IC= 100 µA; IE=0 30 − V collector-emitter breakdown voltage open base; IC= 1 mA; IB=0 25 − V emitter-base breakdown voltage open collector; IE=10µA; IC=0 3 − V collector-emitter saturation voltage IC= 4 mA; IB= 0.4 mA − 0.5 V base-emitter ON voltage VCE= 10 V; IC= 4 mA − 0.95 V collector-base cut-off current VCB= 25 V; IE=0 − 100 nA emitter-base cut-off current VCB= 25 V; IC=0 − 100 nA DC current gain VCE= 10 V; IC= 4 mA 60 − collector-emitter feedback
capacitance collector-base feedback capacitance VCB= 10 V; IC=ic=0;
VCB= 10 V; IE=ie=0; f = 1 MHz
− 0.7 pF
0.35 0.65 pF
f = 1 MHz
transition frequency VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
collector-base time constant VCB= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
650 − MHz
− 9ps
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
100
handbook, halfpage
Y
11
(mS)
80
60
40
20
0
2
10
VCB= 10 V; IC= 4 mA.
g
11
−b
11
MRA168
f (MHz)
Fig.2 Common base input admittance (Y11) as a
function of frequency.
−10
handbook, halfpage
b
11
(mS)
−20
1000 MHz
−30
−40
−50
3
10
−60 0 100
VCB= 10 V; IC= 4 mA.
700
400
20 40 60 80
200 100
MRA170
g11 (mS)
Fig.3 Common base input admittance (Y11).
f (MHz)
MRA169
3
10
70
handbook, halfpage
Y
21
(mS)
50
30
10
−10
−30
2
10
VCB= 10 V; IC= 4 mA.
b
21
−g
21
Fig.4 Common base forward transfer admittance
(Y21) as a function of frequency.
60
handbook, halfpage
b
21
(mS)
100
50
40
30
20
10
−70 30
VCB= 10 V; IC= 4 mA.
200
−50 −30 −10 10
400
600
700
MRA171
1000 MHz
g21 (mS)
Fig.5 Common base forward transfer admittance
(Y21).
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
handbook, halfpage
5
Y
12
(mS)
4
3
2
1
0
2
10
VCB= 10 V; IC= 4 mA.
−b
12
g
12
MRA164
f (MHz)
Fig.6 Common base reverse transfer admittance
(Y12) as a function of frequency.
handbook, halfpage
3
10
0
b
12
(mS)
−1
−2
−3
−4
−5
VCB= 10 V; IC= 4 mA.
−1.2 −0.4 0.4 1.2
−22
100 200
400
700
1000 MHz
MRA166
g12 (mS)
Fig.7 Common base reverse transfer admittance
(Y12).
g
22
f (MHz)
MRA165
10
10
handbook, halfpage
Y
22
(mS)
8
6
4
2
0
2
10
VCB= 10 V; IC= 4 mA.
b
22
Fig.8 Common base reverse admittance (Y22)as
a function of frequency.
10
handbook, halfpage
b
22
(mS)
8
6
4
2
3
0
010
VCB= 10 V; IC= 4 mA.
1000 MHz
700 MHz
400 MHz
200 MHz
100 MHz
2468
MRA167
g
(mS)
22
Fig.9 Common base reverse admittance (Y22).
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
3.0
0.38
0.09
IEC JEDEC EIAJ
2.8
1.4
1.2
e
E
1.9
REFERENCES
0.95
e
1
UNIT
mm
VERSION
A
1.1
0.9
OUTLINE
SOT23
max.
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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