Philips PMBTH10 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBTH10
NPN 1 GHz general purpose
switching transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
FEATURES
• Low cost
• High power gain.
PINNING
PIN DESCRIPTION
Code: V30
page
3
1 base
DESCRIPTION
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
2 emitter
3 collector
12
Top view
MSB003
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
P
tot
h
FE
C
re
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 3V
total power dissipation Ts=45°C (note 1) − 400 mW
DC current gain VCE= 10 V; IC= 4 mA 60 −
collector-emitter feedback
VCB= 10 V; IE= 0; f = 1 MHz − 0.7 pF
capacitance
C
rb
collector-base feedback
VCB= 10 V; IE= 0; f = 1 MHz 0.35 0.65 pF
capacitance
f
T
r
bCc
transition frequency VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
collector-base time constant VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
650 − MHz
− 9ps
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 3V
DC collector current − 40 mA
total power dissipation Ts=45°C (note 1) − 400 mW
storage temperature −65 150 °C
junction temperature − 150 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
September 1995 2
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor PMBTH10
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-s
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE sat
V
BE on
I
CBO
I
EBO
h
FE
C
re
C
rb
f
T
r
bCc
from junction to soldering point (note 1) 260 K/W
collector-base breakdown voltage open emitter; IC= 100 µA; IE=0 30 − V
collector-emitter breakdown voltage open base; IC= 1 mA; IB=0 25 − V
emitter-base breakdown voltage open collector; IE=10µA; IC=0 3 − V
collector-emitter saturation voltage IC= 4 mA; IB= 0.4 mA − 0.5 V
base-emitter ON voltage VCE= 10 V; IC= 4 mA − 0.95 V
collector-base cut-off current VCB= 25 V; IE=0 − 100 nA
emitter-base cut-off current VCB= 25 V; IC=0 − 100 nA
DC current gain VCE= 10 V; IC= 4 mA 60 −
collector-emitter feedback
capacitance
collector-base feedback capacitance VCB= 10 V; IC=ic=0;
VCB= 10 V; IE=ie=0;
f = 1 MHz
− 0.7 pF
0.35 0.65 pF
f = 1 MHz
transition frequency VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
collector-base time constant VCB= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
650 − MHz
− 9ps
September 1995 3
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