Philips PMBTA64 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBTA64
PNP Darlington transistor
Product specification
Supersedes data of 1998 Jul 21
1999 Apr 13
Philips Semiconductors Product specification
PNP Darlington transistor PMBTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complement: PMBTA14.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBTA64 ∗2V
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
Fig.1 Simplified outline (SOT23) and symbol.
13
TR1
TR2
2
MAM299
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CES
EBO
C
CM
B
tot
stg
j
amb
collector-base voltage open emitter −−30 V
collector-emitter voltage VBE=0 −−30 V
emitter-base voltage open collector −−10 V
collector current (DC) −−500 mA
peak collector current −−800 mA
base current (DC) −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 13 2
Philips Semiconductors Product specification
PNP Darlington transistor PMBTA64
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −30 V −−100 nA
emitter cut-off current IC= 0; VEB= −10 V; −−100 nA
DC current gain IC= −10 mA; VCE= −5 V; (see Fig.2) 10000 −
= −100 mA; VCE= −5 V; (see Fig.2) 20000 −
I
C
collector-emitter saturation voltage IC= −100 mA; IB= −0.1 mA −−1.5 V
base-emitter on-state voltage IC= −100 mA; VCE= −5V −−2V
transition frequency IC= −10 mA; VCE= −50 V;
125 − MHz
f = 100 MHz
100000
handbook, full pagewidth
h
FE
80000
60000
40000
20000
0
−1 −10
VCE= −2V.
−10
Fig.2 DC gain current; typical values.
MGD836
2
IC (mA)
−10
3
1999 Apr 13 3
Loading...