Philips pmbta45 Datasheet

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PMBTA45

500 V, 150 mA NPN high-voltage low V

Rev. 02 — 10 March 2010 Product data sheet

1. Product profile

1.1 General description

NPN high-voltage low V SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9050T.

1.2 Features and benefits

 High voltage  Low collector-emitter saturation voltage V  High collector current capability IC and I  High collector current gain (hFE) at high I  AEC-Q101 qualified

(BISS) transistor

CEsat

Breakthrough In Small Signal (BISS) transistor in a

CEsat

1.3 Applications

 Electronic ballasts  LED driver for LED chain module  LCD backlighting  Automotive motor management  Flyback converters  Hook switch for wired telecom  Switch Mode Power Supply (SMPS)

1.4 Quick reference data

Ta ble 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V I

CESM

CEO

collector-emitter peak voltage

collector-emitter voltage open base - - 500 V collector current - - 0.15 A DC current gain VCE=10V; IC= 30 mA 50 100 -

VBE= 0 V - - 500 V

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NXP Semiconductors

PMBTA45

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base 2emitter 3 collector

3. Ordering information

Ta ble 3. Ordering information

Type number Package

PMBTA45 - plastic surface-mounted package; 3 leads SOT23

500 V, 150 mA NPN high-voltage low V

(BISS) transistor

CEsat

sym02

Name Description Version

4. Marking

Ta ble 4. Marking codes

Type number Marking code

PMBTA45 LK*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

[1]

Product data sheet Rev. 02 — 10 March 2010 2 of 13

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NXP Semiconductors

PMBTA45

5. Limiting values

Ta ble 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

CESM

EBO

tot

amb

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

500 V, 150 mA NPN high-voltage low V

(BISS) transistor

CEsat

collector-base voltage open emitter - 500 V collector-emitter voltage open base - 500 V collector-emitter peak voltage VBE=0V - 500 V emitter-base voltage open collector - 6 V collector current - 0.15 A peak collector current single pulse;

≤ 1ms

peak base current single pulse;

-0.5A

-200mA

tp≤ 1ms

total power dissipation T

amb

≤ 25 °C

[1]

-300mW junction temperature - 150 °C ambient temperature −55 +150 °C storage temperature −65 +150 °C

400

tot

(mW)

300

200

100

−75 17512525 75−25

FR4 PCB, standard footprint

Fig 1. Power derating curve

006aab150

(°C)

amb

Product data sheet Rev. 02 — 10 March 2010 3 of 13

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NXP Semiconductors

PMBTA45

6. Thermal characteristics

Ta ble 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

thermal resistance from junction to ambient

thermal resistance from junction to solder point

th(j-a)

(K/W)

duty cycle = 1

0.75

0.33

0.1

0.02

0.5

0.2

0.05

0.01

th(j-a)

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

500 V, 150 mA NPN high-voltage low V

in free air

[1]

- - 417 K/W

--70K/W

(BISS) transistor

CEsat

006aab691

−1

−5

−4

−3

−2

−1

1010

tp (s)

FR4 PCB, standard footprint

Fig 2. Transi en t the rmal impe da nce from junction to ambient as a function of p ulse du ration; typical values

Product data sheet Rev. 02 — 10 March 2010 4 of 13

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NXP Semiconductors

PMBTA45

7. Characteristics

Table 7. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

CES

EBO

CEsat

BEsat

off

[1] Pulse test: tp≤ 300 μs; δ≤0.02.

500 V, 150 mA NPN high-voltage low V

CEsat

=25°C unless otherwise specified.

collector-base cut-off current

collector-emitter

VCB=360V; IE= 0 A - - 100 nA

=360V; IE=0A;

= 150 °C

--10μA

VCE=360V; VBE= 0 V - - 100 nA

cut-off current emitter-base cut-off

VEB=5V; IC= 0 A - - 100 nA

current DC current gain VCE=10V

= 30 mA 50 100 -

[1]

50 100 -

[1]

-6590mV

[1]

- 0.75 0.9 V

collector-emitter saturation voltage

base-emitter

=50mA

IC=20mA; IB=2mA - 60 75 mV

=50mA; IB=6mA

IC=50mA; IB=5mA

saturation voltage transition frequency VCE=10V; IE=10mA;

-35-MHz

f = 100 MHz

collector capacitance VCB=20V; IE=ie=0A;

-4-pF

f=1MHz

emitter capacitance VEB=0.5V;

- 200 - pF

IC=ic=0A; f=1MHz

delay time VCC=20V; IC=0.05A;

=5mA;

rise time - 2700 - ns turn-on time - 2780 - ns

Bon Boff

= −10 mA

-80-ns

storage time - 3400 - ns fall time - 800 - ns turn-off time - 4200 - ns

(BISS) transistor

Product data sheet Rev. 02 — 10 March 2010 5 of 13

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NXP Semiconductors

PMBTA45

500 V, 150 mA NPN high-voltage low V

006aab720

(mA)

200

150

(1)

100

−1

110

(2)

(3)

VCE=10V

amb amb amb

= 100 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 3. DC current gain as a function of collector

current; typical values

(BISS) transistor

CEsat

006aab721

VCE (V)

(A)

0.5

0.4

0.3

0.2

0.1

0.0

IB (mA) = 70

054231

=25°C

amb

Fig 4. Collector current as a function of

collector-emitter voltage; typical values

006aab722

(mA)

1.00

(V)

0.75

0.50

0.25

0.0

(1)

(2)

(3)

−1

110

VCE=10V

amb amb amb

= −55 °C =25°C = 100 °C

(1) T (2) T (3) T

Fig 5. Base-emitter voltage as a function of collector

current; typical values

006aab723

(mA)

BEsat

1.2

(V)

0.9

0.6

0.3

0.0

(1) T (2) T (3) T

(1)

(2)

(3)

−1

C/IB

amb amb amb

110

= −55 °C =25°C = 100 °C

Fig 6. Base-emitter saturation voltage as a function

of collector current; typical val ue s

Product data sheet Rev. 02 — 10 March 2010 6 of 13

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NXP Semiconductors

006aab724

006aab725

PMBTA45

CEsat

(V)

−1

(1)

(2)

(3)

−2

−1

110

IC (mA)

IC/IB=5

amb amb amb

= 100 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values

500 V, 150 mA NPN high-voltage low V

CEsat

(V)

−1

−2

−1

(1) I (2) I (3) I

amb C/IB C/IB C/IB

110

=25°C =20 =10 =5

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

(1)

(2)

(3)

(BISS) transistor

CEsat

IC (mA)

(1) (2) (3)

006aab726

IC (mA)

CEsat

(Ω)

−1

110

IC/IB=5

amb amb amb

= 100 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 9. Collector-emitter saturation resistance as a

function of collector current; typical values

(1)

(3)

006aab727

(2)

IC (mA)

CEsat

(Ω)

(1) I (2) I (3) I

−1

amb C/IB C/IB C/IB

110

=25°C =20 =10 =5

Fig 10. Collector-emitter saturation resistance as a

function of collector current; typical values

Product data sheet Rev. 02 — 10 March 2010 7 of 13

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NXP Semiconductors

PMBTA45

8. Test information

Fig 11. Test circuit for switching times

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

oscilloscope

500 V, 150 mA NPN high-voltage low V

(probe)

450 Ω

DUT

mlb826

(probe)

450 Ω

CEsat

oscilloscope

(BISS) transistor

9. Package outline

Fig 12. Package outline SOT23 (TO-236AB)

10. Packing information

Ta ble 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PMBTA45 SOT23 4 mm pitch, 8 mm tape and reel -215 -235

2.5

2.1

3.0

2.8

0.45

0.15

1.4

1.2

0.48

1.9

0.38

1.1

0.9

0.15

0.09

[1]

04-11-04Dimensions in mm

3000 10000

[1] For further information and the availability of packing methods, see Section 14.

Product data sheet Rev. 02 — 10 March 2010 8 of 13

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NXP Semiconductors

PMBTA45

11. Soldering

500 V, 150 mA NPN high-voltage low V

3.3

2.9

1.9

1.7

0.7

(3×)

0.5

(3×)

0.6

(3×)

0.6

(3×)

(BISS) transistor

CEsat

solder lands

solder resist

solder paste

occupied area

Dimensions in mm

sot023_

Fig 13. Reflow soldering footprint SOT23 (TO-236AB)

2.2

1.2

(2×)

1.4

(2×)

2.6

4.6

1.4

2.8

4.5

Fig 14. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

Dimensions in mm

preferred transport direction during soldering

sot023_

Product data sheet Rev. 02 — 10 March 2010 9 of 13

Page 10

NXP Semiconductors

PMBTA45

500 V, 150 mA NPN high-voltage low V

(BISS) transistor

CEsat

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBTA45_2 20100310 Product data sheet - PMBTA4 5_1 Modifications: PMBTA45_1 20090916 Product data sheet - -

• Figure 7: updated

Product data sheet Rev. 02 — 10 March 2010 10 of 13

Page 11

NXP Semiconductors

PMBTA45

500 V, 150 mA NPN high-voltage low V

(BISS) transistor

CEsat

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

[1][2]

Product status

[3]

Definition

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred t o as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

, unless otherwise

Product data sheet Rev. 02 — 10 March 2010 11 of 13

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NXP Semiconductors

PMBTA45

500 V, 150 mA NPN high-voltage low V

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

(BISS) transistor

CEsat

Product data sheet Rev. 02 — 10 March 2010 12 of 13

Page 13

NXP Semiconductors

PMBTA45

500 V, 150 mA NPN high-voltage low V

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

(BISS) transistor

CEsat

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 10 March 2010

Document identifier: PMBTA45_2