Philips pmbta44 Datasheet

PMBTA44

400 V, 0.3 A NPN high-voltage low V

Rev. 01 — 22 February 2008 Product data sheet

1. Product profile

1.1 General description

NPN high-voltage low V
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Low current (max. 300 mA)
n High voltage (max. 400 V)
n AEC-Q101 qualified

1.3 Applications

n LED driver for LED chain module
n LCD backlighting
n High Intensity Discharge (HID) front lighting
n Automotive motor management
n Hook switch for wired telecom
n Switch mode power supply

(BISS) transistor

CEsat

Breakthrough In Small Signal (BISS) transistor in a

CEsat

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
I
h

CEO

C

FE

collector-emitter voltage open base - - 400 V
collector current - - 300 mA
DC current gain VCE=10V; IC=10mA 50 - 200

NXP Semiconductors

PMBTA44

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 base
2 emitter
3 collector

3. Ordering information

Table 3. Ordering information

Type number Package

PMBTA44 - plastic surface-mounted package; 3 leads SOT23

400 V, 0.3 A NPN high-voltage low V

3

12

Name Description Version

(BISS) transistor

CEsat

1

sym021

3

2

4. Marking

Table 4. Marking codes

Type number Marking code

PMBTA44 W3*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 2 of 12

NXP Semiconductors

PMBTA44

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

400 V, 0.3 A NPN high-voltage low V

(BISS) transistor

CEsat

collector-base voltage open emitter - 500 V
collector-emitter voltage open base - 400 V
emitter-base voltage open collector - 6 V
collector current - 300 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

- 300 mA

- 100 mA

[1]

- 250 mW
junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

300

P

tot

(mW)

200

100

0

−75 17512525 75−25

FR4 PCB, standard footprint

Fig 1. Power derating curve SOT23 (TO-236AB)

006aab196

T

(°C)

amb

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 3 of 12

NXP Semiconductors

PMBTA44

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

thermal resistance from junction to
ambient

Z

th(j-a)

(K/W)

3

10

2

10

10

1

duty cycle = 1

0.75

0.33

0.1

0.02

0

0.5

0.2

0.05

0.01

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

400 V, 0.3 A NPN high-voltage low V

in free air

[1]

- - 500 K/W

(BISS) transistor

CEsat

006aab151

−1

10

−5

10

−4

10

−3

10

−2

−1

10

1

1010

2

10

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for

SOT23 (TO-236AB)

tp (s)

3

10

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 4 of 12

NXP Semiconductors

PMBTA44

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

f

T

C

c

C

e

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

400 V, 0.3 A NPN high-voltage low V

=25°C unless otherwise specified.

collector-basecut-off
current

emitter-base cut-off
current

DC current gain VCE=10V

collector-emitter
saturation voltage

base-emitter
saturation voltage

transition frequency VCE=10V; IE=10mA;

collector capacitance VCB=20V;IE=ie=0A;

emitter capacitance VEB= 0.5 V;

VCB= 320 V; IE= 0 A - - 100 nA

= 320 V; IE=0A;

V

CB

T

= 150 °C

j

VEB=4V; IC= 0 A - - 100 nA

= 10 mA 50 - 200

I

C

=50mA

I

C

= 100 mA

I

C

IC= 1 mA; IB= 0.1 mA - - 400 mV

= 10 mA; IB= 1 mA - - 500 mV

I

C

= 50 mA; IB=5mA

I

C

IC= 10 mA; IB=1mA

f = 100 MHz

f=1MHz

I

= 0 A; f = 1 MHz

C=ic

(BISS) transistor

CEsat

--10µA

[1]

45 - -

[1]

40 - -

[1]

- - 750 mV

[1]

- - 850 mV

20 - - MHz

--7pF

- - 180 pF

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 5 of 12

NXP Semiconductors

PMBTA44

10

006aab190

2

I

(mA)

C

3

10

200

h

FE

150

100

50

0

−1

10

110

(1)

(2)

(3)

VCE=10V
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 3. DC current gain as a function of collector

current; typical values

400 V, 0.3 A NPN high-voltage low V

0.3
IB (mA) = 26

I

C

(A)

0.2

0.1

Fig 4. Collector current as a function of

23.4

20.8

18.2

15.6

13

10.4

7.8

5.2

2.6

0

054231

T

=25°C

amb

collector-emitter voltage; typical values

(BISS) transistor

CEsat

006aab191

VCE (V)

10

006aab192

2

I

(mA)

C

3

10

V

(V)

BE

1.2

0.8

0.4

(1)

(2)

(3)

0

−1

10

110

VCE=10V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 5. Base-emitter voltage as a function of collector

current; typical values

10

006aab193

2

IC (mA)

3

10

V

1.2

BEsat

(V)

0.8

0.4

(1)

(2)

(3)

0

−1

10

110

IC/IB=5
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 6. Base-emittersaturation voltage as a function of

collector current; typical values

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 6 of 12

NXP Semiconductors

PMBTA44

10

006aab194

2

IC (mA)

10

V

CEsat

(V)

10

10

1

−1

−2

−1

10

110

(1)
(2)
(3)

IC/IB=5
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values

400 V, 0.3 A NPN high-voltage low V

3

10

R

CEsat

(Ω)

2

10

10

1

−1

3

10

−1

10

110

IC/IB=5
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 8. Collector-emitter saturation resistance as a

function of collector current; typical values

(BISS) transistor

CEsat

006aab195

(1)
(2)
(3)

2

10

IC (mA)

3

10

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 7 of 12

NXP Semiconductors

PMBTA44

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
suitable for use in automotive applications.

9. Package outline

400 V, 0.3 A NPN high-voltage low V

(BISS) transistor

CEsat

Q101 - Stress test qualification for discrete semiconductors

2.5

2.1

1.4

1.2

3.0

2.8

3

0.45

0.15

1.1

0.9

, and is

Fig 9. Package outline SOT23 (TO-236AB)

10. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PMBTA44 SOT23 4 mm pitch, 8 mm tape and reel -215 -235

[1] For further information and the availability of packing methods, seeSection 14.

12

1.9

0.48

0.38

0.15

0.09

[1]

04-11-04Dimensions in mm

3000 10000

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 8 of 12

NXP Semiconductors

PMBTA44

11. Soldering

400 V, 0.3 A NPN high-voltage low V

2.90

2.50

0.85

3.00

1.30

0.85

1.00

3.30

Fig 10. Reflow soldering footprint SOT23 (TO-236AB)

12

3

0.60
(3x)

0.50 (3x)

0.60 (3x)

2.70

sot023

(BISS) transistor

CEsat

solder lands
solder resist

solder paste

occupied area

Dimensions in mm

3.40

1.20 (2x)

4.004.60

1.20

21

3

Dimensions in mm

2.80

4.50

preferred transport direction during soldering

Fig 11. Wave soldering footprint SOT23 (TO-236AB)

solder lands
solder resist
occupied area

sot023

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 9 of 12

NXP Semiconductors

PMBTA44

400 V, 0.3 A NPN high-voltage low V

(BISS) transistor

CEsat

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBTA44_1 20080222 Product data sheet - -

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 10 of 12

NXP Semiconductors

PMBTA44

400 V, 0.3 A NPN high-voltage low V

(BISS) transistor

CEsat

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referenced brands,product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

PMBTA44_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 22 February 2008 11 of 12

NXP Semiconductors

PMBTA44

400 V, 0.3 A NPN high-voltage low V

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

(BISS) transistor

CEsat

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 22 February 2008

Document identifier: PMBTA44_1