Philips pmbta42ds Datasheet

PMBTA42DS

NPN/NPN high-voltage double transistors

Rev. 02 — 27 August 2009 Product data sheet

1. Product profile

1.1 General description

NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted
Device (SMD) plastic package.

1.2 Features

n High breakdown voltage
n Two electrically isolated transistors
n Small SMD plastic package

1.3 Applications

n Automotive:

n Communication: Telecom line interface
n Consumer: CRT TV
n Computing: Monitors

u High- and low-side switches
u Voltage regulators

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V
I
I

CEO
C
CM

collector-emitter voltage open base - - 300 V
collector current - - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

- - 200 mA

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 emitter TR1
2 base TR2
3 collector TR2
4 emitter TR2
5 base TR1
6 collector TR1

3. Ordering information

Table 3. Ordering information

Type number Package

PMBTA42DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457

PMBTA42DS

NPN/NPN high-voltage double transistors

4

56

TR1

132

132

Name Description Version

456

TR2

006aaa677

4. Marking

Table 4. Marking codes

Type number Marking code

PMBTA42DS P4

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

collector-base voltage open emitter - 300 V
collector-emitter voltage open base - 300 V
emitter-base voltage open collector - 6 V
collector current - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

- 200 mA

- 100 mA

[1]

- 290 mW

[2]

- 370 mW

[3]

- 450 mW

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 2 of 10

NXP Semiconductors

PMBTA42DS

NPN/NPN high-voltage double transistors

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

total power dissipation T

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

Per device

R

th(j-a)

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

thermal resistance from
junction to ambient

…continued

≤ 25 °C

amb

in free air

in free air

[1]

- 420 mW

[2]

- 560 mW

[3]

- 700 mW

[1]

- - 431 K/W

[2]

- - 338 K/W

[3]

- - 278 K/W

- - 105 K/W

[1]

- - 298 K/W

[2]

- - 223 K/W

[3]

- - 179 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 3 of 10

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

re

f

T

NPN/NPN high-voltage double transistors

=25°C unless otherwise specified

collector-base
cut-off current

emitter-base
cut-off current

DC current gain VCE=10V; IC= 1 mA 25 - -

collector-emitter
saturation voltage

base-emitter
saturation voltage

feedback
capacitance

transition
frequency

VCB= 200 V; IE= 0 A - - 100 nA

VEB=6V; IC= 0 A - - 100 nA

=10V; IC=10mA 40 - -

V

CE

=10V; IC=30mA 40 - -

V

CE

IC= 20 mA; IB= 2 mA - - 500 mV

IC= 20 mA; IB= 2 mA - - 900 mV

VCB=20V; IC=ic=0A;

--3pF

f = 1 MHz
VCE=20V; IC= 10 mA;

50 - - MHz

f = 100 MHz

PMBTA42DS

006aaa688

27
24
21
18
15

12

9
6

3

I

C

(mA)

200

150

100

50

0

0108462

T

IB (mA) = 30

=25°CV

amb

Fig 1. Collector current as a function of

collector-emitter voltage; typical values

VCE (V)

I

C

(mA)

mld391

2

10

300

h

FE

200

100

0

10

(1) T
(2) T
(3) T

−1

CE
amb
amb
amb

(1)

(2)

(3)

101

=10V

= 150 °C
=25°C
= −55 °C

Fig 2. DC current gain as a function of collector

current; typical values

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 4 of 10

NXP Semiconductors

PMBTA42DS

NPN/NPN high-voltage double transistors

IC (mA)

mld393

2

10

1000

V

BE

(mV)

800

600

400

200

(1)

(2)

(3)

0

−1

10

101

VCE=10V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 3. Base-emitter voltage as a function of collector

current; typical values

I

C

(mA)

mld394

2

10

V

(mV)

1000

BEsat

800

600

400

200

(1)

(2)

(3)

−1

10

101

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 4. Base-emitter saturation voltage as a function

of collector current, typical values

IC (mA)

mld395

2

10

V

(mV)

10

CEsat

10

3

2

10

−1

10

(1)
(2)

(3)

101

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 5 of 10

NXP Semiconductors

8. Package outline

PMBTA42DS

NPN/NPN high-voltage double transistors

Fig 6. Package outline SOT457 (SC-74)

9. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PMBTA42DS SOT457 4 mm pitch, 8 mm tape and reel; T1

3.1

2.7

56

3.0

1.7

2.5

1.3

pin 1 index

132

0.95

1.9

4 mm pitch, 8 mm tape and reel; T2

1.1

0.9

4

0.6

0.2

[1]

0.26

0.10

04-11-08Dimensions in mm

0.40

0.25

3000 10000

[2]

-115 -135

[3]

-125 -165

[1] For further information and the availability of packing methods, seeSection 13.
[2] T1: normal taping
[3] T2: reverse taping

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 6 of 10

NXP Semiconductors

10. Soldering

3.30

2.825

0.95

3.45

1.95

1.60

1.70

3.10

3.20

PMBTA42DS

NPN/NPN high-voltage double transistors

solder lands

solder resist

0.45 0.55
occupied area

solder paste

msc422

Dimensions in mm

Fig 7. Reflow soldering footprint SOT457 (SC-74)

5.30

5.05

1.40

4.30

Dimensions in mm

Fig 8. Wave soldering footprint SOT457 (SC-74)

0.45

1.45 4.45

msc423

solder lands
solder resist
occupied area

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 7 of 10

NXP Semiconductors

NPN/NPN high-voltage double transistors

PMBTA42DS

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBTA42DS_2 20090827 Product data sheet - PMBTA42DS_1
Modifications:

PMBTA42DS_1 20060106 Product data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 8 “Wave soldering footprint SOT457 (SC-74)”:updated

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 8 of 10

NXP Semiconductors

12. Legal information

12.1 Data sheet status

PMBTA42DS

NPN/NPN high-voltage double transistors

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not giveany representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 9 of 10

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

PMBTA42DS

NPN/NPN high-voltage double transistors

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 27 August 2009

Document identifier: PMBTA42DS_2