Philips PMBTA13 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBTA13; PMBTA14
NPN Darlington transistors
Product specification
Supersedes data of 1997 Apr 18
1999 Apr 29
Philips Semiconductors Product specification
NPN Darlington transistors PMBTA13; PMBTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complement: PMBTA64.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBTA13 ∗1M
PMBTA14 ∗1N
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
1
3
2
Fig.1 Simplified outline (SOT23) and symbol.
13
TR1
TR2
2
MAM298
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CES
EBO
C
CM
B
tot
stg
j
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage VBE=0 − 30 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 800 mA
base current (DC) − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 29 2
Philips Semiconductors Product specification
NPN Darlington transistors PMBTA13; PMBTA14
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=30V − 100 nA
emitter cut-off current IC= 0; VEB=10V − 100 nA
DC current gain IC= 10 mA; VCE= 5 V; (see Fig.2)
PMBTA13 5000 −
PMBTA14 10000 −
DC current gain I
= 100 mA; VCE= 5 V; (see Fig.2)
C
PMBTA13 10000 −
PMBTA14 20000 −
collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA − 1.5 V
base-emitter on-state voltage IC= 100 mA; VCE=5V − 1.4 V
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 125 − MHz
80000
handbook, full pagewidth
h
FE
60000
40000
20000
0
−1
10
VCE=2V.
1
10 10
Fig.2 DC current gain; typical values.
MGD837
2
IC (mA)
3
10
1999 Apr 29 3
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