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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBTA06
NPN general purpose transistor
Product specification
Supersedes data of 1998 Jul 20
1999 Apr 29
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Philips Semiconductors Product specification
NPN general purpose transistor PMBTA06
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose switching and amplification in e.g.
telephony and professional communication equipment.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: PMBTA56.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBTA06 ∗1G
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 80 V
collector-emitter voltage open base − 80 V
emitter-base voltage open collector − 4V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 29 2
![](/html/88/8852/8852996baf30ed9d7636d347659d80cd62039cc932314a83b4670d6f417401bf/bg3.png)
Philips Semiconductors Product specification
NPN general purpose transistor PMBTA06
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=80V − 50 nA
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 10 mA; VCE= 1 V 100 −
= 100 mA; VCE= 1 V 100 −
I
C
collector-emitter saturation voltage IC= 100 mA; IB=10mA − 0.25 V
base-emitter voltage IC= 100 mA; VCE=1V − 1.2 V
transition frequency IC= 10 mA; VCE= 2 V; f = 100 MHz 100 − MHz
1999 Apr 29 3