Philips PMBT6428, PMBT6429 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT6428; PMBT6429
NPN general purpose transistors
Product specification
Supersedes data of 1997 Apr 02
1999 Apr 27
Philips Semiconductors Product specification
NPN general purpose transistors PMBT6428; PMBT6429
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification
• Telephony and professional communication equipment.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT6428 ∗1K
PMBT6429 ∗1L
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline SOT23 and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMBT6428 − 60 V
PMBT6429 − 55 V
V
CEO
collector-emitter voltage open base
PMBT6428 − 50 V
PMBT6429 − 45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN general purpose transistors PMBT6428; PMBT6429
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=30V − 10 nA
emitter cut-off current IC= 0; VEB=5V − 10 nA
DC current gain IC= 0.1 mA; VCE=5V
PMBT6428 250 650
PMBT6429 500 1250
DC current gain I
= 1 mA; VCE=5V
C
PMBT6428 250 −
PMBT6429 500 −
DC current gain I
= 10 mA; VCE=5V
C
PMBT6428 250 −
PMBT6429 500 −
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 200 mV
I
= 100 mA; IB=5mA − 600 mV
C
base-emitter voltage IC= 1 mA; VCE= 5 V 560 660 mV
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 3pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 12 pF
transition frequency IC= 1 mA; VCE= 5 V; f = 100 MHz 100 700 MHz
1999 Apr 27 3
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