Philips PMBT5550 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT5550
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Jun 16
1999 Apr 15
Philips Semiconductors Product specification
NPN high-voltage transistor PMBT5550
FEATURES
PINNING
• Low current (max. 300 mA)
• Low voltage (max. 140 V).
APPLICATIONS
• Telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
handbook, halfpage
PNP complement: PMBT5401.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT5550 ∗1F
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 base
2 emitter
3 collector
Top view
3
1
21
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 160 V
collector-emitter voltage open base − 140 V
emitter-base voltage open collector − 6V
collector current (DC) − 300 mA
peak collector current − 600 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
NPN high-voltage transistor PMBT5550
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= 100 V − 50 nA
I
= 0; VCB= 100 V; T
E
= 100 °C − 50 µA
amb
emitter cut-off current IC= 0; VEB=4V − 50 nA
DC current gain VCE= 5 V; (see Fig.2)
I
= 1 mA 60 −
C
= 10 mA 60 250
I
C
I
=50mA 20 −
C
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 150 mV
I
= 50 mA; IB=5mA − 250 mV
C
base-emitter saturation voltage IC= 10 mA; IB=1mA − 1V
I
= 50 mA; IB=5mA − 1.2 V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 6pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 30 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 100 300 MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
− 10 dB
f = 10 Hz to 15.7 kHz
1999 Apr 15 3
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