Philips PMBT5401 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D088
PMBT5401
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 15
Philips Semiconductors Product specification
PNP high-voltage transistor PMBT5401
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 150 V).
APPLICATIONS
• Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: PMBT5550.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT5401 ∗2L
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−160 V
collector-emitter voltage open base −−150 V
emitter-base voltage open collector −−5V
collector current (DC) −−300 mA
peak collector current −−600 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
PNP high-voltage transistor PMBT5401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −120 V −−50 nA
I
= 0; VCB= −120 V; T
E
= 150 °C −−50 µA
amb
emitter cut-off current IC= 0; VEB= −4V −−50 nA
DC current gain VCE= −5 V; (see Fig.2)
I
= −1mA 50 −
C
=−10 mA 60 240
I
C
I
= −50 mA 50 −
C
collector-emitter saturation voltage IC= −10 mA; IB= −1mA −−200 mV
I
= −50 mA; IB= −5mA −−500 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −−1V
I
=−50 mA; IB= −5mA −−1V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 6pF
transition frequency IC= −10 mA; VCE= −10 V;
f = 100 MHz; T
= −200 µA; VCE= −5 V; RS=2kΩ;
C
f = 10 Hz to 15.7 kHz; T
amb
=25°C
amb
=25°C
100 300 MHz
− 8dB
1999 Apr 15 3
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