Philips PMBT5088 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT5088
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jul 11
1999 Apr 15
Philips Semiconductors Product specification
NPN general purpose transistor PMBT5088
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 30 V).
APPLICATIONS
• Intended for low-noise input stages in audio equipment.
DESCRIPTION
handbook, halfpage
NPN transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT5088 ∗1Q
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
Top view
3
1
21
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 35 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
NPN general purpose transistor PMBT5088
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=20V − 50 nA
emitter cut-off current IC= 0; VEB=3V − 50 nA
DC current gain IC= 100 µA; VCE= 5 V 300 900
= 1 mA; VCE= 5 V 350 −
I
C
I
= 10 mA; VCE=5V 300 −
C
collector-emitter saturation
IC= 10 mA; IB=1mA − 500 mV
voltage
base-emitter saturation voltage IC= 10 mA; IB=1mA − 800 mV
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 10 pF
= 100 µA; VCE=5V; RS=1kΩ;
C
− 3dB
f = 10 Hz to 15.7 kHz
1999 Apr 15 3
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