Philips PMBT4403-AT Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 May 05
1999 Apr 15
DISCRETE SEMICONDUCTORS
PMBT4403
PNP switching transistor
ook, halfpage
M3D088
1999 Apr 15 2
Philips Semiconductors Product specification
PNP switching transistor PMBT4403
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Industrial and consumer switching applications.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: PMBT4401.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER MARKING CODE
(1)
PMBT4403 ∗2T
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−40 V
V
CEO
collector-emitter voltage open base −−40 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−600 mA
I
CM
peak collector current −−800 mA
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 15 3
Philips Semiconductors Product specification
PNP switching transistor PMBT4403
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= −40 V −−50 nA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−50 nA
h
FE
DC current gain VCE= −1 V; (see Fig.2)
I
C
= −0.1 mA 30 −
I
C
= −1mA 60 −
I
C
=−10 mA 100 −
V
CE
= −2V
I
C
=−150 mA 100 300
I
C
= −500 mA 20 −
V
CEsat
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA −−400 mV
I
C
= −500 mA; IB= −50 mA −−750 mV
V
BEsat
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−950 mV
I
C
= −500 mA; IB= −50 mA −−1.3 V
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8.5 pF
C
e
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 35 pF
f
T
transition frequency IC= −20 mA; VCE= −10 V; f = 100 MHz 200 − MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= −150 mA; I
Bon
= −15 mA;
I
Boff
=15mA
− 40 ns
t
d
delay time − 15 ns
t
r
rise time − 30 ns
t
off
turn-off time − 350 ns
t
s
storage time − 300 ns
t
f
fall time − 50 ns
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