Philips pmbt3906 Datasheet

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PMBT3906

PNP switching transistor

Rev. 06 — 2 March 2010 Product data sheet

1. Product profile

1.1 General description

PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBT3904.

1.2 Features and benefits

 Collector-emitter voltage V  Collector current capability I

1.3 Applications

 General amplification and switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base 2emitter 3 collector

= −40 V

CEO

= −200 mA

collector-emitter voltage open base - - −40 V collector current - - −200 mA

06aab2

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NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

PMBT3906 - plastic surface-mounted package; 3 leads SOT23

4. Marking

Table 4. Marking codes

Type number Marking code

PMBT3906 *2A

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

PMBT3906

PNP switching transistor

Name Description Version

[1]

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

amb

stg

[1] Device mounted on an FR4Printed-Circuit Board (PCB).

collector-base voltage open emitter - −40 V collector-emitter voltage open base - −40 V emitter-base voltage open collector - −6V collector current - −200 mA peak collector current - −200 mA peak base current - −100 mA total power dissipation T

amb

≤ 25 °C

[1]

-250mW junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

Product data sheet Rev. 06 — 2 March 2010 2 of 11

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NXP Semiconductors

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to ambient

[1] Device mounted on an FR4 PCB.

7. Characteristics

Table 7. Characteristics

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

EBO

CEsat

BEsat

off

NF noise figure I

collector-base cut-off current

emitter-base cut-off current

DC current gain VCE= −1V

collector-emitter saturation voltage

base-emitter saturation voltage

delay time I rise time - - 35 ns turn-on time - - 70 ns storage time - - 225 n s fall time - - 75 ns turn-off time - - 300 ns transition frequency VCE= −20 V;

collector capacitance VCB= −5V; IE=ie=0A;

emitter capacitance VEB= −500 mV;

PMBT3906

PNP switching transistor

in free air

VCB= −30 V; IE=0A - - −50 nA

VEB= −6V; IC=0A - - −50 nA

= −0.1 mA 60 - -

= −1mA 80 - -

= −10 mA 100 - 300

= −50 mA 60 - -

= −100 mA 30 - -

IC= −10 mA; IB= −1mA - - −250 mV

= −50 mA; IB= −5mA - - −400 mV

IC= −10 mA; IB= −1mA - - −850 mV

= −50 mA; IB= −5mA - - −950 mV

= −10 mA;

Con

= −1mA;

Bon

=1mA

Boff

= −10 mA;

f=100MHz

f=1MHz

IC=ic=0A; f=1MHz

= −100 μA;

= −5V; RS=1kΩ;

f = 10 Hz to 15.7 kHz

[1]

--500K/W

--35ns

250 - - MHz

--4.5pF

--10pF

--4dB

Product data sheet Rev. 06 — 2 March 2010 3 of 11

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NXP Semiconductors

PMBT3906

PNP switching transistor

−10

mhc459

(mA)

−10

600

400

200

−10

(1)

(2)

(3)

−1

−1 −10

VCE= −1V

amb amb amb

= 150 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 1. DC current gain as a function of collector

current; typical values

−1.2

−0.9

−0.6

−0.3

006aab845

−1.05

−0.75

−0.45

−0.15

−250

(mA)

−200

−150

−100

−50

0 −10

−2

=25°C

amb

IB (mA) = −1.5

−4 −6 −8

Fig 2. Collector current as a function of

collector-emitter voltage; typical values

−1.35

(V)

−10

mhc461

(mA)

−1200

(mV)

−1000

−800

−600

−400

−200

−10

(1)

(2)

(3)

−1

−1 −10

VCE= −1V

amb amb amb

= −55 °C =25°C = 150 °C

(1) T (2) T (3) T

Fig 3. Base-emitter voltage as a function of

collector current; typical values

−10

mhc462

(mA)

−10

−1200

BEsat

(mV)

−1000

−800

−600

−400

−200

−10

(1) T (2) T (3) T

C/IB

−1

amb amb amb

−1 −10

=10

= −55 °C =25°C = 150 °C

(1)

(2)

(3)

Fig 4. Base-emitter saturation voltage as a function

of collector current; typical val ue s

Product data sheet Rev. 06 — 2 March 2010 4 of 11

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NXP Semiconductors

PMBT3906

PNP switching transistor

−10

mhc463

(mA)

−10

(mV)

−10

CEsat

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB=10

amb amb amb

= 150 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values

Product data sheet Rev. 06 — 2 March 2010 5 of 11

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NXP Semiconductors

8. Test information

−

PMBT3906

PNP switching transistor

90 %

10 %

−

90 %

10 %

input pulse (idealized waveform)

−

(100 %)

Bon

−

Boff

output pulse

off

(idealized waveform)

−

IC (100 %)

006aaa266

Fig 6. BISS transistor switching time definition

oscilloscope

(probe)

450 Ω

VI= 5 V; T = 500 μs; tp=10μs; tr=tf≤ 3ns R1 = 56 Ω; R2 = 2.5 kΩ; R

= 1.9 V; VCC= −3V

Oscilloscope: input impedance Z

=3.9kΩ; RC= 270 Ω

=50Ω

(probe)

oscilloscope

450 Ω

DUT

mgd624

Fig 7. Test circuit for switching times

Product data sheet Rev. 06 — 2 March 2010 6 of 11

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NXP Semiconductors

9. Package outline

PMBT3906

PNP switching transistor

Fig 8. Package outline SOT23 (TO-236AB)

10. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PMBT3906 SOT23 4 mm pitch, 8 mm tape and reel -215 -235

2.5

2.1

3.0

2.8

0.45

0.15

1.4

1.2

0.48

1.9

0.38

1.1

0.9

0.15

0.09

[1]

04-11-04Dimensions in mm

3000 10000

[1] For further information and the availability of packing methods, see Section 13.

Product data sheet Rev. 06 — 2 March 2010 7 of 11

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NXP Semiconductors

PMBT3906

PNP switching transistor

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBT3906_6 20100302 Product data sheet - PMBT3906_N_5 Modifications:

PMBT3906_N_5 20071004 Product data sheet - PMBT3906_4 PMBT3906_4 20040121 Product specification - PMBT3906_3 PMBT3906_3 19990427 Product specification - PMBT3906_CNV_2 PMBT3906_CNV_2 19970505 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 4 “Marking”: amended

• Table 7 “Characteristics”: F redefined to NF noise figure

• Section 8 “Test information”: added

• Figure 6: added

• Figure 8: superseded by minimized package outline drawing

• Section 10 “Packing information”: added

• Section 12 “Legal information”: updated

Product data sheet Rev. 06 — 2 March 2010 8 of 11

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NXP Semiconductors

PMBT3906

PNP switching transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred t o as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

, unless otherwise

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

Product data sheet Rev. 06 — 2 March 2010 9 of 11

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NXP Semiconductors

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

PMBT3906

PNP switching transistor

Product data sheet Rev. 06 — 2 March 2010 10 of 11

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NXP Semiconductors

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . 10

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PMBT3906

PNP switching transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 2 March 2010

Document identifier: PMBT3906_ 6