Philips pmbt3904vs Datasheet [en, ca]

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

Rev. 01 — 8 July 2009 Product data sheet

1. Product profile

1.1 General description

NPN/NPN double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview

Type number Package PNP/PNP

PMBT3904VS SOT666 - PMBT3906VS PMBT3946VPN

1.2 Features

n Double general-purpose switching transistor
n Board-space reduction
n Ultra small and flat lead SMD plastic package

NXP JEITA

complement

NPN/PNP
complement

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V
I
h

CEO

C

FE

collector-emitter voltage open base - - 40 V
collector current - - 200 mA
DC current gain VCE=1V;

I

=10mA

C

100 180 300

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

3. Ordering information

Table 4. Ordering information

Type number Package

PMBT3904VS - plastic surface-mounted package; 6 leads SOT666

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

6

5

2

sym020

4

TR2

3

456

TR1

123

1

Name Description Version

4. Marking

Table 5. Marking codes

Type number Marking code

PMBT3904VS ZC

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

Per device

P

tot

collector-base voltage open emitter - 60 V
collector-emitter voltage open base - 40 V
emitter-base voltage open collector - 6 V
collector current - 200 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

total power dissipation T

amb

amb

≤ 25 °C

≤ 25 °C

- 200 mA

- 100 mA

[1][2]

- 240 mW

[1][2]

- 360 mW

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 2 of 11

NXP Semiconductors

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

Table 6. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

[2] Reflow soldering is the only recommended soldering method.

junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

footprint.

400

P

tot

(mW)

300

200

100

006aab604

FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

thermal resistance from
junction to ambient

0

−75 17512525 75−25

in free air

in free air

T

(°C)

amb

[1][2]

- - 521 K/W

- - 100 K/W

[1][2]

- - 347 K/W

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 3 of 11

NXP Semiconductors

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

3

10

duty cycle =

Z

th(j-a)

(K/W)

10

10

1

0.5

2

0.2

0.05

0.01
0

1

−5

10

FR4 PCB, standard footprint

0.75

0.33

0.1

0.02

10

−4

−3

10

−2

−1

10

1

1010

006aab605

2

10

tp (s)

3

10

Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

7. Characteristics

Table 8. Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

collector-basecut-off
current

I

EBO

emitter-base cut-off
current

h

V

FE

CEsat

DC current gain VCE=1V

collector-emitter
saturation voltage

V

BEsat

base-emitter
saturation voltage

t

d

t

r

t

on

t

s

t

f

t

off

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 4 of 11

delay time VCC=3V; IC=10mA;
rise time - - 35 ns
turn-on time - - 70 ns
storage time - - 200 ns
fall time - - 50 ns
turn-off time - - 250 ns

VCB=30V; IE=0A --50nA

VEB=6V; IC=0A --50nA

= 0.1 mA 60 180 -

I

C

= 1 mA 80 180 -

I

C

= 10 mA 100 180 300

I

C

= 50 mA 60 105 -

I

C

= 100 mA 30 50 -

I

C

IC= 10 mA; IB= 1 mA - 75 200 mV

= 50 mA; IB= 5 mA - 120 300 mV

I

C

IC= 10 mA; IB= 1 mA 650 750 850 mV

= 50 mA; IB= 5 mA - 850 950 mV

I

C

--35ns

I

= 1 mA;

Bon

I

= −1mA

Boff

NXP Semiconductors

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

Table 8. Characteristics

T

=25°C unless otherwise specified.

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

C

c

collector capacitance VCB=5V; IE=ie=0A;

--4pF

f=1MHz

C

e

f

T

emitter capacitance VEB= 500 mV;

I

= 0 A; f = 1 MHz

C=ic

transition frequency VCE=20V; IC=10mA;

--8pF

300 - - MHz

f = 100 MHz

NF noise figure V

=5V; IC= 100 µA;

CE

R

=1kΩ;

S

--5dB

f = 10 Hz to 15.7 kHz

600

h

FE

400

(1)

200

(2)

(3)

006aab115

I

(A)

0.20

C

0.15

0.10

0.05

IB (mA) = 5.0

4.0

3.0

2.0

1.0

006aab116

4.5

3.5

2.5

1.5

0.5

0

−1

10

110

VCE=1V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 3. Per transistor:

DC current gain as a function of collector

current; typical values

0.0
0108462

T

amb

VCE (V)

=25°C

(mA)

3

10

2

10

I

C

Fig 4. Per transistor:

Collector current as a function of
collector-emitter voltage; typical values

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 5 of 11

NXP Semiconductors

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

1.2

V

BE

(V)

0.8

0.4

0

−1

10

(1)

(2)

(3)

110

VCE=1V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 5. Per transistor:

Base-emitter voltage as a function of collector

current; typical values

10

006aab117

2

I

(mA)

C

10

006aab118

2

IC (mA)

3

10

1.3

V

BEsat

(V)

0.9

0.5

3

10

0.1

−1

10

(1)

(2)

(3)

110

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 6. Per transistor:

Base-emitter saturation voltage as a function

of collector current; typical values

2

10

006aab119

IC (mA)

3

10

V

CEsat

(V)

10

10

1

(2)

−1

−2

−1

10

(1)

(3)

110

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 6 of 11

NXP Semiconductors

8. Test information

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

Fig 8. Test circuit for switching times

9. Package outline

V

BB

R

B

oscilloscope

V

R

(probe)

450 Ω

I

R2

R1

VI= 5 V; t = 600 µs; tp=10µs; tr=tf≤ 3ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB= 3.9 kΩ; RC= 270 Ω
VBB= −1.9 V; VCC=3V

1.7

1.5

V

CC

C

V

o

(probe)

oscilloscope

450 Ω

DUT

mlb826

0.6

0.5

456

1.7

1.3

1.5

1.1

Dimensions in mm

Fig 9. Package outline SOT666

pin 1 index

123

0.5
1

0.27

0.17

0.3

0.1

0.18

0.08

04-11-08

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 7 of 11

NXP Semiconductors

10. Packing information

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

4000 8000

PMBT3904VS SOT666 2 mm pitch, 8 mm tape and reel - -315

4 mm pitch, 8 mm tape and reel -115 -

[1] For further information and the availability of packing methods, seeSection 14.

2.75

2.45

2.1

1.6

0.4

0.538

1.075

1.72

0.55
(2×)

(6×)

0.25
(2×)

0.3

(2×)

solder lands

placement area

solder paste

1.7

0.45
(4×)

0.5

(4×)

Reflow soldering is the only recommended soldering method.

Fig 10. Reflow soldering footprint SOT666

0.6

(2×)

0.65
(2×)

0.325
(4×)

0.375
(4×)

occupied area

Dimensions in mm

sot666_fr

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 8 of 11

NXP Semiconductors

40 V, 200 mA NPN/NPN switching transistor

PMBT3904VS

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBT3904VS_1 20090708 Product data sheet - -

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 9 of 11

NXP Semiconductors

13. Legal information

13.1 Data sheet status

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 8 July 2009 10 of 11

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 8 July 2009

Document identifier: PMBT3904VS_1