Philips pmbt3904m Datasheet

PMBT3904M

40 V, 200 mA NPN switching transistor

Rev. 01 — 21 July 2009 Product data sheet

BOTTOM VIEW

1. Product profile

1.1 General description

NPN single switching transistor in a SOT883 (SC-101) leadless ultra small
Surface-Mounted Device (SMD) plastic package.

PNP complement: PMBT3906M.

1.2 Features

n Single general-purpose switching transistor
n Board-space reduction
n Ultra small SMD plastic package

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
I
h

CEO

C

FE

collector-emitter voltage open base - - 40 V
collector current - - 200 mA
DC current gain VCE=1V;

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 base
2 emitter
3 collector

I

=10mA

C

100 180 300

1
2

Transparent

top view

3

3

1

2

sym021

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

PMBT3904M SC-101 leadless ultra small plastic package; 3 solder lands;

4. Marking

Table 4. Marking codes

Type number Marking code

PMBT3904M 6P

5. Limiting values

PMBT3904M

40 V, 200 mA NPN switching transistor

Name Description Version

SOT883

body 1.0 × 0.6 × 0.5 mm

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

j

T

amb

T

stg

[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

collector-base voltage open emitter - 60 V
collector-emitter voltage open base - 40 V
emitter-base voltage open collector - 6 V
collector current - 200 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

- 200 mA

- 100 mA

[1][2]

- 260 mW

[1][3]

- 590 mW
junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

footprint.

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 2 of 11

NXP Semiconductors

PMBT3904M

40 V, 200 mA NPN switching transistor

(1) FR4 PCB, mounting pad for collector 1cm
(2) FR4 PCB, standard footprint

Fig 1. Power derating curves SOT883 (SC-101)

6. Thermal characteristics

800

P

tot

(mW)

600

400

200

0

−75 17512525 75−25

006aab602

(1)

(2)

T

(°C)

amb

2

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from

in free air

junction to ambient

[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[1][2]

- - 481 K/W

[1][3]

- - 212 K/W

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 3 of 11

NXP Semiconductors

PMBT3904M

40 V, 200 mA NPN switching transistor

3

10

duty cycle =

Z

th(j-a)

(K/W)

10

10

1

0.5

2

0.2

0.05

0.01
0

1

−5

10

FR4 PCB, standard footprint

0.75

0.33

0.1

0.02

10

−4

−3

10

−2

−1

10

1

1010

006aab603

2

10

tp (s)

3

10

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

collector-basecut-off
current

I

EBO

emitter-base cut-off
current

h

V

FE

CEsat

DC current gain VCE=1V

collector-emitter
saturation voltage

V

BEsat

base-emitter
saturation voltage

t

d

t

r

t

on

t

s

t

f

t

off

C

c

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 4 of 11

delay time VCC=3V; IC=10mA;
rise time - - 35 ns
turn-on time - - 70 ns
storage time - - 200 ns
fall time - - 50 ns
turn-off time - - 250 ns
collector capacitance VCB=5V; IE=ie=0A;

VCB=30V; IE=0A --50nA

VEB=6V; IC=0A --50nA

= 0.1 mA 60 180 -

I

C

= 1 mA 80 180 -

I

C

= 10 mA 100 180 300

I

C

= 50 mA 60 105 -

I

C

= 100 mA 30 50 -

I

C

IC= 10 mA; IB= 1 mA - 75 200 mV

= 50 mA; IB= 5 mA - 120 300 mV

I

C

IC= 10 mA; IB= 1 mA 650 750 850 mV

= 50 mA; IB= 5 mA - 850 950 mV

I

C

--35ns

I

= 1 mA;

Bon

I

= −1mA

Boff

--4pF

f=1MHz

NXP Semiconductors

PMBT3904M

40 V, 200 mA NPN switching transistor

Table 7. Characteristics

T

=25°C unless otherwise specified.

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

C

e

f

T

emitter capacitance VEB= 500 mV;

I

= 0 A; f = 1 MHz

C=ic

transition frequency VCE=20V; IC=10mA;

--8pF

300 - - MHz

f = 100 MHz

NF noise figure V

=5V; IC= 100 µA;

CE

R

=1kΩ;

S

--5dB

f = 10 Hz to 15.7 kHz

600

h

FE

400

(1)

200

(2)

(3)

006aab115

I

(A)

0.20

C

0.15

0.10

0.05

IB (mA) = 5.0

4.0

3.0

2.0

1.0

006aab116

4.5

3.5

2.5

1.5

0.5

0

−1

10

110

2

10

I

C

(mA)

3

10

VCE=1V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 3. DC current gain as a function of collector

current; typical values

0.0
0108462

T

=25°C

amb

Fig 4. Collector current as a function of

collector-emitter voltage; typical values

VCE (V)

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 5 of 11

NXP Semiconductors

PMBT3904M

40 V, 200 mA NPN switching transistor

10

006aab117

2

I

(mA)

C

3

10

V

(V)

BE

1.2

0.8

0.4

(1)

(2)

(3)

0

−1

10

110

VCE=1V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 5. Base-emitter voltage as a function of collector

current; typical values

10

006aab118

2

IC (mA)

3

10

V

1.3

BEsat

(V)

0.9

0.5

0.1

(1)

(2)

(3)

−1

10

110

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 6. Base-emitter saturation voltage as a function

of collector current; typical values

10

006aab119

2

IC (mA)

3

10

V

CEsat

(V)

10

10

1

(2)

−1

−2

−1

10

(1)

(3)

110

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 6 of 11

NXP Semiconductors

8. Test information

PMBT3904M

40 V, 200 mA NPN switching transistor

Fig 8. Test circuit for switching times

9. Package outline

V

BB

R

B

oscilloscope

V

R

(probe)

450 Ω

I

R2

R1

VI= 5 V; t = 600 µs; tp=10µs; tr=tf≤ 3ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB= 3.9 kΩ; RC= 270 Ω
VBB= −1.9 V; VCC=3V
Oscilloscope: input impedance Zi=50Ω

0.62

0.55

0.55

0.47

V

CC

C

V

o

(probe)

oscilloscope

450 Ω

DUT

mlb826

0.50

0.46

0.30

0.22

0.30

0.22

0.20

0.12

3

21

0.35

Fig 9. Package outline SOT883 (SC-101)

0.65

1.02

0.95

03-04-03Dimensions in mm

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 7 of 11

NXP Semiconductors

10. Packing information

PMBT3904M

40 V, 200 mA NPN switching transistor

11. Soldering

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

10000

PMBT3904M SOT883 2 mm pitch, 8 mm tape and reel -315

[1] For further information and the availability of packing methods, seeSection 14.

1.3

0.9

0.25
(2×)

0.3

(2×)

0.4

(2×)

0.7

0.3

0.4

R0.05 (12×)

0.7

0.6

solder lands

solder resist

solder paste

occupied area

Dimensions in mm

sot883_fr

Fig 10. Reflow soldering footprint SOT883 (SC-101)

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 8 of 11

NXP Semiconductors

40 V, 200 mA NPN switching transistor

PMBT3904M

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBT3904M_1 20090721 Product data sheet - -

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 9 of 11

NXP Semiconductors

13. Legal information

13.1 Data sheet status

PMBT3904M

40 V, 200 mA NPN switching transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document mayhave changed since thisdocument was published and maydiffer in case of multiple devices.The latest productstatus

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have noliability for theconsequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort data sheet isintended
for quickreference only and shouldnot be relied upon to containdetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied,as to the accuracy orcompleteness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all informationsupplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothe device. Limiting valuesare stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale,as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implicationof any license under any copyrights,patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PMBT3904M_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 21 July 2009 10 of 11

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PMBT3904M

40 V, 200 mA NPN switching transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 21 July 2009

Document identifier: PMBT3904M_1