Philips PMBT3904D Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D302
PMBT3904D
NPN switching double transistor
Product specification 1999 Dec 15
Philips Semiconductors Product specification
NPN switching double transistor PMBT3904D
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Reduces number of components and board space.
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
Two independentlyoperating NPN switching transistors in
a SC-74, six lead, SMD plastic package.
MARKING
TYPE NUMBER MARKING CODE
PMBT3904D D1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
56
132
Top view
4
MAM432
645
TR2
TR1
132
Fig.1 Simplified outline (SC-74) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 600 mW
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
1999 Dec 15 2
Philips Semiconductors Product specification
NPN switching double transistor PMBT3904D
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 208 K/W
2
.
collector cut-off current IE= 0; VCB=30V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; note 1; Fig.3
I
= 0.1 mA 60 −
C
I
= 1 mA 80 −
C
I
= 10 mA 100 300
C
I
=50mA 60 −
C
I
= 100 mA 30 −
C
collector-emitter saturation
voltage
IC= 10 mA; IB=1mA − 200 mV
I
= 50 mA; IB=5mA − 200 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 650 850 mV
I
= 50 mA; IB=5mA − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VBE= 500 mV; f = 1 MHz − 8pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 300 − MHz
= 100 µA; VCE=5V; RS=1kΩ;
C
− 5dB
f = 10 Hz to 15.7 kHz
turn-on time I
delay time − 35 ns
= 10 mA;I
Con
VBB= −1.9 V
= 1 mA;VCC=3V;
Bon
− 65 ns
rise time − 35 ns
turn-off time − 240 ns
storage time − 200 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Dec 15 3
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