Philips PMBT3904 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT3904
NPN switching transistor
Product specification
Supersedes data of 1997 May 20
1999 Apr 27
Philips Semiconductors Product specification
NPN switching transistor PMBT3904
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
PIN DESCRIPTION
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
handbook, halfpage
PNP complement: PMBT3906.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT3904 ∗1A
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
Top view
3
1
21
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN switching transistor PMBT3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=30V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; note 1; Fig.2
= 0.1 mA 60 −
I
C
I
= 1 mA 80 −
C
= 10 mA 100 300
I
C
I
=50mA 60 −
C
I
= 100 mA 30 −
C
collector-emitter saturation
voltage
IC= 10 mA; IB=1mA − 200 mV
I
= 50 mA; IB=5mA − 200 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 650 850 mV
I
= 50 mA; IB=5mA − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VBE= 500 mV; f = 1 MHz − 8pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 300 − MHz
= 100 µA; VCE=5V; RS=1kΩ;
C
− 5dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
I
Con
Boff
= 10 mA; I
= −1mA
rise time − 35 ns
turn-off time − 240 ns
storage time − 200 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
Bon
= 1 mA;
− 65 ns
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