Philips PMBT3640 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PMBT3640

PNP 1 GHz switching transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

PNP 1 GHz switching transistor PMBT3640

DESCRIPTION

PNP general purpose switching
transistor in a SOT23 package.

PINNING

PIN DESCRIPTION

Code: V25

page

3

1 base
2 emitter
3 collector

12

Top view

MSB003

Fig.1 SOT23.

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

−V

CBO

−V

CEO

−V

EBO

−I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 12 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 4V
DC collector current − 80 mA
total power dissipation up to Ts=85°C (note 1) − 350 mW
storage temperature −55 150 °C
junction temperature − 175 °C

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-s

from junction to soldering point (note 1) 260 K/W

Note

1. T

is the temperature at the soldering point of the collector tab.

s

September 1995 2