Philips PMBT2369 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT2369
NPN switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 27
Philips Semiconductors Product specification
NPN switching transistor PMBT2369
FEATURES
• Low current (max. 200 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching, especially in portable equipment.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT2369 ∗1J
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
Top view
3
1
21
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 5V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN switching transistor PMBT2369
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=20V − 400 nA
I
= 0; VCB=20V; Tj= 125 °C − 30 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 10 mA; VCE= 1 V 40 120
I
= 10 mA; VCE=1V; T
C
= 100 mA; VCE=2V 20 −
I
C
= −55 °C20 −
amb
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 250 mV
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 700 850 mV
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 − MHz
turn-on time I
delay time − 4ns
I
Con
Boff
= 10 mA; I
= −1.5 mA
Bon
= 3 mA;
− 10 ns
rise time − 6ns
turn-off time − 20 ns
storage time − 10 ns
fall time − 10 ns
1999 Apr 27 3
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