Philips pmbt2369 Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

PMBT2369

NPN switching transistor

Product data sheet
Supersedes data of 1999 Apr 27

2004 Jan 22

NXP Semiconductors Product data sheet

NPN switching transistor PMBT2369

FEATURES

• Low current (max. 200 mA)

• Low voltage (max. 15 V).

APPLICATIONS

• High-speed switching, especially in portable equipment.

DESCRIPTION

NPN switching transistor in a SOT23 plastic package.

MARKING

T YPE NUMBER MARKING CODE

(1)

PMBT2369 *1J

Note

1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.

ORDERING INFORMATION

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

21

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

3

1

2

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

PMBT2369 − plastic surface mounted package; 3 leads SOT23

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 5 V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 22 2

NXP Semiconductors Product data sheet

NPN switching transistor PMBT2369

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

f

T

Switching times (between 10% and 90% levels); (see Fig.2)
t

on

t

d

t

r

t

off

t

s

t

f

thermal resistance from junction to ambient note 1 500 K/W

collector cut-off current IE = 0; VCB = 20 V − 400 nA

IE = 0; VCB = 20 V; Tj = 125 °C − 30 µA
emitter cut-off current IC = 0; VEB = 4 V − 100 nA
DC current gain IC = 10 mA; VCE = 1 V 40 120

IC = 10 mA; VCE = 1 V; T

= −55 °C 20 −

amb

IC = 100 mA; VCE = 2 V 20 −
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 250 mV
base-emitter saturation vo ltage IC = 10 mA; IB = 1 mA 700 850 mV
collector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz − 4 pF
transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 500 − MHz

turn-on time I
delay time − 4 ns

= 10 mA; I

Con

= −1.5 mA

I

Boff

= 3 mA;

Bon

− 10 ns

rise time − 6 ns
turn-off time − 20 ns
storage time − 10 ns
fall time − 10 ns

2004 Jan 22 3

NXP Semiconductors Product data sheet

V

V

NPN switching transistor PMBT2369

handbook, full pagewidth

oscilloscope

Vi = 0.5 to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω.
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope input impedance Zi = 50 Ω.

BB

R

(probe)

450 Ω

V

i

B

R2

R1

CC

R

C

V

o

DUT

Fig.2 Test circuit for switching times.

(probe)

MLB826

450 Ω

oscilloscope

2004 Jan 22 4

NXP Semiconductors Product data sheet

3

NPN switching transistor PMBT2369

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w

M

B

E

H

E

detail X

AB

Q

L

p

X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

b

cD

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Jan 22 5

NXP Semiconductors Product data sheet

NPN switching transistor PMBT2369

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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General ⎯ Information in this document is believed to be

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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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use in medical, military, aircraft, space or life support
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accepts no liability for inclusion and/or use of NXP
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applications and therefore such inclusion and/or use is at
the customer’s own risk.

(1)

PRODUCT

STATUS

(2)

DEFINITION

development.

the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC

2004 Jan 22 6

60134) may cause permanent damage to

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d
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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 22 Document order number: 9397 750 12458