Philips PMBT2222, PMBT2222A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT2222; PMBT2222A
NPN switching transistors
Product specification
Supersedes data of 1997 Sep 09
1999 Apr 27
Philips Semiconductors Product specification
NPN switching transistors PMBT2222; PMBT2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: PMBT2907 and PMBT2907A.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT2222 ∗1B
PMBT2222A ∗1P
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMBT2222 − 60 V
PMBT2222A − 75 V
V
CEO
collector-emitter voltage open base
PMBT2222 − 30 V
PMBT2222A − 40 V
V
EBO
emitter-base voltage open collector
PMBT2222 − 5V
PMBT2222A − 6V
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN switching transistors PMBT2222; PMBT2222A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current
PMBT2222 I
= 0; VCB=50V − 10 nA
E
I
= 0; VCB=50V; Tj= 125 °C − 10 µA
E
collector cut-off current
PMBT2222A IE= 0; VCB=60V − 10 nA
= 0; VCB=60V; Tj= 125 °C − 10 µA
I
E
emitter cut-off current IC= 0; VEB=5V
PMBT2222A − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 35 −
I
= 1 mA; VCE=10V 50 −
C
I
= 10 mA; VCE=10V 75 −
C
I
DC current gain I
= 10 mA; VCE=10V; T
C
I
= 150 mA; VCE= 10 V 100 300
C
I
= 150 mA; VCE=1V 50 −
C
= 500 mA; VCE=10V
C
= −55 °C35 −
amb
PMBT2222 30 −
PMBT2222A 40 −
collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1
PMBT2222 − 400 mV
PMBT2222A − 300 mV
collector-emitter saturation voltage I
= 500 mA; IB= 50 mA; note 1
C
PMBT2222 − 1.6 V
PMBT2222A − 1V
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1
PMBT2222 − 1.3 V
PMBT2222A 0.6 1.2 V
base-emitter saturation voltage I
= 500 mA; IB= 50 mA; note 1
C
PMBT2222 − 2.6 V
PMBT2222A − 2V
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 8pF
1999 Apr 27 3
Loading...