Philips PMBS3906 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBS3906
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 20
1999 Apr 22
Philips Semiconductors Product specification
PNP general purpose transistor PMBS3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBS3904.
MARKING
TYPE NUMBER MARKING CODE
PMBS3906 ∗O6
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 22 2
Philips Semiconductors Product specification
PNP general purpose transistor PMBS3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
= 25 °C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −30 V −−50 nA
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain VCE= −1 V; (see Fig.2)
= −0.1 mA 60 −
I
C
I
= −1mA 80 −
C
=−10 mA 100 300
I
C
I
= −50 mA; note 1 60 −
C
I
= −100 mA; note 1 30 −
C
collector-emitter saturation voltage IC= −10 mA; IB= −1mA −−250 mV
I
= −50 mA; IB= −5 mA; note 1 −−400 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −−850 mV
I
= −50 mA; IB= −5 mA; note 1 −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 100 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 100 MHz − 12 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 150 − MHz
= −100 µA; VCE= −5 V; RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz;
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 50 ns
= −10 mA; I
Con
I
=1mA
Boff
rise time − 50 ns
turn-off time − 700 ns
storage time − 600 ns
fall time − 100 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
Bon
= −1 mA;
− 100 ns
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