Philips pmbfj620 Datasheet

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PMBFJ620

Dual N-channel ﬁeld-effect transistor

Rev. 01 — 11 May 2004 Product data sheet

1. Product proﬁle

1.1 General description

Two N-channel symmetrical junction ﬁeld-effect transistors in a SOT363 package.

CAUTION

MSC895

1.2 Features

■ Two ﬁeld effect transistors in a single package

■ Low noise

■ Interchangeability of drain and source connections

■ High gain.

This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.

1.3 Applications

■ AM input stage in car radios

■ VHF ampliﬁers

■ Oscillators and mixers.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per FET

V V

DSS

y

DS GSoff

tot

drain-source voltage - - ±25 V gate-source cut-off

voltage drain current VGS = 0 V; VDS=10V 24 - 60 mA total power

dissipation

 forward transfer

admittance

VDS=10V; ID=1µA −2- −6.5 V

Ts≤ 90 °C - - 190 mW

VDS = 10 V; I

=10mA

10--mS

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Philips Semiconductors

2. Pinning information

Table 2: Discrete pinning information

Pin Description Simpliﬁed outline Symbol

1 source (1) 2 source (2) 3 gate (2) 4 drain (2) 5 drain (1) 6 gate (1)

3. Ordering information

Table 3: Ordering information

Type number Package

PMBFJ620 - plastic surface mounted package; 6 leads SOT363

PMBFJ620

Dual N-channel ﬁeld-effect transistor

6 5 4

1 2 3

SOT363

Name Description Version

sym034

5 1

4. Marking

Table 4: Marking

Type number Marking code

PMBFJ620 A8*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

[1]

Product data sheet Rev. 01 — 11 May 2004 2 of 13

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Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per FET

V V V I P T T

DS GSO GDO

tot stg j

drain-source voltage - ±25 V gate-source voltage open drain - −25 V drain-gate voltage open source - −25 V forward gate current (DC) - 50 mA total power dissipation Ts≤ 90 °C - 190 mW storage temperature −65 +150 °C junction temperature - 150 °C

6. Thermal characteristics

PMBFJ620

Dual N-channel ﬁeld-effect transistor

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

001aaa742

Ts (°C)

[1]

315 K/W

[1]

160 K/W

th(j-s)

thermal resistance fromjunction to soldering points

[1] Ts is the temperature at the soldering point of the gate pins, see Figure 1.

400

tot

(mW)

300

200

100

0 20015050 100

single loaded double loaded

(1)

(2)

(1) Double loaded. (2) Single loaded.

Fig 1. Power derating curve.

Product data sheet Rev. 01 — 11 May 2004 3 of 13

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Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

7. Static characteristics

Table 7: Characteristics

Tj = 25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per FET

(BR)GSS

gate-source breakdown

voltage V V I

DSS

GSS

GSoff GSS

DSon

gate-source cut-off voltage ID = 1 µA; VDS = 10 V −2- −6.5 V

gate-source forward voltage IG = 1 mA; VDS = 0 V - - 1 V

drain-source leakage current VDS = 10 V; VGS = 0 V 24 - 60 mA

gate-source leakage current VGS = −15 V; VDS = 0 V - - −1nA

drain-source on-state

resistance

 common source forward

y

transfer admittance

 common source output

y

admittance

IG = −1 µA; VDS = 0 V −25--V

VGS = 0 V; VDS= 100 mV - 50 - Ω

ID = 10 mA; VDS = 10 V 10 - - mS

ID = 10 mA; VDS = 10 V - - 250 µS

8. Dynamic characteristics

Table 8: Characteristics

Tj = 25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per FET

iss

rss

input capacitance VDS = 10 V; VGS = −10 V; f =1 MHz - 3 5 pF

= 10 V; VGS = 0 V; T

= 25 °C- 6- pF

amb

reverse transfer capacitance VDS = 0 V; VGS = −10 V; f = 1 MHz - 1.3 2.5 pF

common source input

conductance

common source transfer

conductance

common source reverse

conductance

common source output

conductance

VDS=10V;ID= 10 mA; f = 100 MHz - 200 - µS

=10V;ID= 10 mA; f = 450 MHz - 3 - mS

VDS=10V;ID= 10 mA; f = 100 MHz - 13 - mS

=10V;ID= 10 mA; f = 450 MHz - 12 - mS

VDS=10V;ID= 10 mA; f = 100 MHz - −30 - µS

=10V;ID= 10 mA; f = 450 MHz - −450 - µS

VDS=10V;ID= 10 mA; f = 100 MHz - 150 - µS

=10V;ID= 10 mA; f = 450 MHz - 400 - µS

equivalent input noise voltage VDS = 10 V; ID = 10 mA; f = 100 Hz - 6 - nV/√Hz

Product data sheet Rev. 01 — 11 May 2004 4 of 13

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Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

DSS

(mA)

0 −1 −2 −4

mcd220

−3 V

GSoff

(V)

VDS = 10 V; Tj = 25 °C. VDS = 10 V; ID = 10 mA; Tj = 25 °C.

Fig 2. Drain current as a function of gate-source

cut-off voltage; typical values.

150

(µS)

100

mcd221

(mS)

0 −2 −4 −8

mcd219

−6 V

(V)

GSoff

Fig 3. Commonsource forward transfer admittance as

a function of gate-source cut-off voltage; typical values.

mcd222

DSon

(Ω)

−1 −2 −4

−3

(V)

GSoff

0 −1 −2 −4

−3

GSoff

(V)

VDS = 10 V; ID = 10 mA; Tj = 25 °C. VDS = 100 mV; VGS = 0 V; Tj = 25 °C.

Fig 4. Common-source output conductance as a

function of gate-source cut-off voltage; typical

Fig 5. Drain-source on-state resistance as a function

of gate-source cut-off voltage; typical values.

values.

Product data sheet Rev. 01 — 11 May 2004 5 of 13

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Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

(mA)

048 16

mcd217

VGS = 0 V

−0.5 V

−1 V

−1.5 V

−2 V

−2.5 V

(V)

(mA)

−4 −3 −20

Tj = 25 °C. VDS = 10 V; Tj = 25 °C.

Fig 6. Typical output characteristics. Fig 7. Typical transfer characteristics.

(pF)

mcd224

(pF)

mcd214

−1 (V)

mcd223

−10 −40

−8 −6 −2

VGS (V)

VDS = 10 V; Tj = 25 °C. VDS = 10 V; Tj = 25 °C.

Fig 8. Reverse transfer capacitance as a function of

gate-source voltage; typical values.

−10 0

−8 −6 −4 −2

VGS (V)

Fig 9. Input capacitance as a function of gate-source

voltage; typical values.

Product data sheet Rev. 01 — 11 May 2004 6 of 13

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Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

(µA)

−1

−2

−3

−2.5 0−0.5−1.5 −1.0−2.0

VDS = 10 V; Tj = 25 °C.

Fig 10. Drain current as a function of gate-source voltage; typical values.

−10

GSS

(pA)

−10

= 10 mA

mcd229

VGS (V)

mcd230

1 mA

−10

−1

−10

0 161248

Tj = 25 °C.

Fig 11. Gate current as a function of drain-gate voltage; typical values.

100 µA

GSS

(V)

Product data sheet Rev. 01 — 11 May 2004 7 of 13

Page 8

Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

GSS

(pA)

−1

−25 17512525 75

Fig 12. Gate current as a function of junction temperature; typical values.

mcd231

Tj (°C)

Product data sheet Rev. 01 — 11 May 2004 8 of 13

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Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

100

gis, b

(mS)

0.1 10

VDS = 10 V; ID = 10 mA; T

100 1000

= 25 °C. VDS = 10 V; ID = 10 mA; T

amb

mcd228

f (MHz)

Fig 13. Input admittance as a function of frequency;

typical values.

mcd226

−b

, −g

(mS)

− b

f (MHz)

mcd227

1000

−b

fs,

(mS)

100

−b

10010

amb

= 25 °C.

Fig 14. Forward transfer admittance as a function of

frequency; typical values.

mcd225

os, gos

(mS)

100

− g

−1

−2

VDS = 10 V; ID = 10 mA; T

10010

amb

f (MHz)

= 25 °C. VDS = 10 V; ID = 10 mA; T

1000

Fig 15. Reverse transfer admittance as a function of

frequency; typical values.

0.1 10

100 1000

amb

f (MHz)

= 25 °C.

Fig 16. Output admittance as a function of frequency;

typical values.

Product data sheet Rev. 01 — 11 May 2004 9 of 13

Page 10

Philips Semiconductors

PMBFJ620

Dual N-channel ﬁeld-effect transistor

9. Package outline

Plastic surface mounted package; 6 leads SOT363

pin 1 index

132

wBM

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

0.30

0.20

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

1.35

1.3

1.15

REFERENCES

0.65

Qywv

2.2

0.45

2.0

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Fig 17. Package outline.

Product data sheet Rev. 01 — 11 May 2004 10 of 13

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Philips Semiconductors

Dual N-channel ﬁeld-effect transistor

PMBFJ620

10. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

PMBFJ620_1 20040511 Product data - 9397 750 13006 -

Product data sheet Rev. 01 — 11 May 2004 11 of 13

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Philips Semiconductors

11. Data sheet status

PMBFJ620

Dual N-channel ﬁeld-effect transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains data from thepreliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representations or warrantiesthat these products are free from patent, copyright,or mask work right infringement, unless otherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 11 May 2004 12 of 13

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Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information . . . . . . . . . . . . . . . . . . . . 12

PMBFJ620

Dual N-channel ﬁeld-effect transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Document order number: 9397 750 13006

Published in The Netherlands

Date of release: 11 May 2004