Philips PMBFJ308, PMBFJ309, PMBFJ310 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect
transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Sep 11
Philips Semiconductors Product specification
N-channel silicon field-effect transistors
FEATURES
• Low noise
• Interchangeability of drain and source connections
• High gain.
APPLICATIONS
• AM input stage in car radios
• VHF amplifiers
• Oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PMBFJ308; PMBFJ309;
PMBFJ310
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 s source
2 d drain
3 g gate
handbook, halfpage
Marking codes:
PMBFJ308: M08.
PMBFJ309: M09.
PMBFJ310: M10.
21
Top view
3
Fig.1 Simplified outline and symbol.
g
MAM036
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
DS
GSoff
drain-source voltage −±25 V
gate-source cut-off voltage VDS=10V; ID=1µA
PMBFJ308 −1 −6.5 V
PMBFJ309 −1 −4V
PMBFJ310 −2 −6.5 V
I
DSS
drain current VGS= 0; VDS=10V
PMBFJ308 12 60 mA
PMBFJ309 12 30 mA
PMBFJ310 24 60 mA
P
tot
forward transfer admittance VDS=10V; ID=10mA 10 − mS
y
fs
total power dissipation up to T
=25°C − 250 mW
amb
1996 Sep 11 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
400
handbook, halfpage
P
tot
(mW)
300
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
gate-drain voltage open source −−25 V
forward gate current (DC) − 50 mA
total power dissipation up to T
=25°C − 250 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
MBB688
200
100
0
0 50 100 200
150
T
amb
Fig.2 Power derating curve.
(°C)
1996 Sep 11 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GSS
I
DSS
I
GSS
R
DSon
y
forward transfer admittance ID= 10 mA; VDS=10V 10 −−mS
fs
common source output
y
os
thermal resistance from junction to ambient; note 1 500 K/W
gate-source breakdown voltage IG= −1 µA; VDS=0 −25 −−V
gate-source cut-off voltage ID=1µA; VDS=10V V
PMBFJ308 −1 −−6.5 V
PMBFJ309 −1 −−4V
PMBFJ310 −2 −−6.5 V
gate-source forward voltage IG= 1 mA; VDS=0 −−1V
drain current VDS=10V; VGS=0
PMBFJ308 12 − 60 mA
PMBFJ309 12 − 30 mA
PMBFJ310 24 − 60 mA
gate leakage current VGS= −15 V; VDS=0 −−−1nA
drain-source on-state
VGS= 0; VDS= 100 mV − 50 −Ω
resistance
ID= 10 mA; VDS=10V −−250 µS
admittance
1996 Sep 11 4
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