Philips PMBFJ211, PMBFJ212, PMBFJ210 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBFJ210; PMBFJ211;
PMBFJ212
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01
Philips Semiconductors Product specification
N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• High impedance.
APPLICATIONS
• Analog switches
• Choppers, multiplexers and commutators
• Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
SOT23 package.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 s source
2 d drain
3 g gate
handbook, halfpage
12
Top view
Marking codes:
PMBFJ210: M68.
PMBFJ211: M69.
PMBFJ212: M70.
3
g
MAM385
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
DS
GSoff
drain-source voltage −±25 V
gate-source cut-off voltage ID= 1 nA; VDS=15V
PMBFJ210 −1 −3V
PMBFJ211 −2.5 −4.5 V
PMBFJ212 −4 −6V
I
DSS
drain current VGS= 0; VDS=15V
PMBFJ210 2 15 mA
PMBFJ211 7 20 mA
PMBFJ212 15 40 mA
P
tot
y
common-source transfer admittance VGS= 0; VDS=15V
fs
total power dissipation T
≤ 25 °C − 250 mW
amb
PMBFJ210 4 12 mS
PMBFJ211 6 12 mS
PMBFJ212 7 12 mS
1997 Dec 01 2
Philips Semiconductors Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
DS
GSO
DGO
G
tot
stg
j
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
drain-gate voltage open source −−25 V
forward gate current (DC) − 10 mA
total power dissipation T
≤ 25 °C; note 1; see Fig.13 − 250 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient; note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1997 Dec 01 3
Philips Semiconductors Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
STATIC CHARACTERISTICS
T
=25°C.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)GSS
V
GSoff
gate-source breakdown voltage IG= −1 µA; VDS=0 −−25 V
gate-source cut-off voltage ID= 1 nA; VDS=15V
PMBFJ210 −1 −3V
PMBFJ211 −2.5 −4.5 V
PMBFJ212 −4 −6V
V
GSS
I
DSS
gate-source forward voltage IG= 0; VDS=0 − 1V
drain current VGS= 0; VDS=15V
PMBFJ10 2 15 mA
PMBFJ11 7 20 mA
PMBFJ12 15 40 mA
I
GSS
y
common-source transfer admittance VGS= 0; VDS=15V
fs
reverse gate leakage current VGS= −15 V; VDS=0 −−100 pA
PMBFJ210 4 12 mS
PMBFJ211 6 12 mS
PMBFJ212 7 12 mS
y
common source output admittance VGS= 0; VDS=15V
os
PMBFJ210 − 150 µS
PMBFJ211 − 200 µS
PMBFJ212 − 200 µS
DYNAMIC CHARACTERISTICS
T
=25°C.
amb
SYMBOL PARAMETER CONDITIONS TYP. UNIT
C
is
C
os
C
rs
g
is
g
fs
g
rs
g
os
V
n
input capacitance VDS=15V; VGS= −10 V; f = 1 MHz 2 pF
V
=15V; VGS= 0; f = 1 MHz 4 pF
DS
output capacitance VDS=15V; VGS= −10 V; f = 1 MHz 0.8 pF
V
=15V; VGS= 0; f = 1 MHz 2 pF
DS
feedback capacitance VDS=15V; VGS= −10 V; f = 1 MHz 0.8 pF
V
=15V; VGS= 0; f = 1 MHz 0.9 pF
DS
common source input conductance VDS=15V; VGS= 0; f = 100 MHz 70 µS
V
=15V; VGS= 0; f = 450 MHz 1.1 mS
DS
common source transfer conductance VDS=15V; VGS= 0; f = 100 MHz 7.5 mS
=15V; VGS= 0; f = 450 MHz 7.5 mS
V
DS
common source feedback conductance VDS=15V; VGS= 0; f = 100 MHz −8 µS
V
=15V; VGS= 0; f = 450 MHz −90 µS
DS
common source output conductance VDS=15V; VGS= 0; f = 100 MHz 95 µS
V
=15V; VGS= 0; f = 450 MHz 200 µS
DS
equivalent input noise voltage VDS=15V; VGS= 0; f = 1 kHz 5 nV/√Hz
1997 Dec 01 4
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