Philips PMBFJ174, PMBFJ175, PMBFJ176, PMBFJ177 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PMBFJ174 to 177

P-channel silicon field-effect
transistors

Product specification
File under Discrete Semiconductors, SC07

April 1995

Philips Semiconductors Product specification

P-channel silicon field-effect transistors PMBFJ174 to 177

DESCRIPTION

Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.

PINNING

1 = drain
2 = source
3 = gate

Note

1. Drain and source are
interchangeable.

handbook, halfpage

12

Top view

3

g

MAM386

d
s

Marking codes:

Fig.1 Simplified outline and symbol, SOT23.

174 : p6X
175 : p6W
176 : p6S
177 : p6Y

QUICK REFERENCE DATA

Drain-source voltage ± V
Gate-source voltage V
Gate current −I
Total power dissipation

up to T

=25°CP

amb

Drain current

= 15 V; VGS=0

−V

DS

Drain-source ON-resistance

−V

= 0,1 V; VGS=0 R

DS

−I

DS

GSO

G

tot

DSS

DS on

max. 30 V
max. 30 V
max. 50 mA

max. 300 mW

PMBFJ174 175 176 177

>
<

20

135

70

7

2351,520mA

mA

< 85 125 250 300 Ω

April 1995 2